NTZD3155CT2G ON Semiconductor, NTZD3155CT2G Datasheet - Page 5

• Manufacturer Part Number: NTZD3155CT2G
• Description: MOSFET N/P-CH COMPL 20V SOT-563
• Manufacturer: ON Semiconductor

Specifications of NTZD3155CT2G

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 540mA, 430mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 2.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 150pF @ 16V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

200
150
100
100
50
10
0
1
0
1
V
I
V
V
Figure 9. Resistive Switching Time Variation
D
V
DS
GS
DS
V
= 0.2 A
GS
DS
= 10 V
= 4.5 V
= 0 V
= 0 V
N-CHANNEL TYPICAL PERFORMANCE CURVES
Figure 7. Capacitance Variation
DRAIN-T O-SOURCE VOLTAGE (V)
5
R
versus Gate Resistance
G
, GATE RESISTANCE (W)
t
r
t
t
d(OFF)
f
10
10
C
t
d(ON)
OSS
15
T
J
C
= 25°C
ISS
http://onsemi.com
NTZD3155C
20
100
5
5
4
3
2
1
0
0
0.6
0.5
0.4
0.3
0.2
0.1
Q
0
Drain-to-Source Voltage versus Total Charge
0.2
V
GS
DS
0.2
V
T
Figure 10. Diode Forward Voltage versus
J
GS
0.3
= 25°C
(T
Q
Figure 8. Gate-to-Source and
V
= 0 V
Q
J
GD
0.4
SD
g
= 25°C unless otherwise noted)
, TOTAL GATE CHARGE (nC)
, SOURCE-TO-DRAIN VOLTAGE (V)
0.4
0.6
Q
0.5
T
0.8
Current
0.6
1
0.7
I
T
D
1.2
J
= 0.54 A
= 25°C
0.8
1.4
V
GS
0.9
1.6
20
16
12
8
4
0
1