NTZD5110NT1G ON Semiconductor, NTZD5110NT1G Datasheet - Page 2

• Manufacturer Part Number: NTZD5110NT1G
• Description: MOSFET N-CH DUAL 60V SOT563-6
• Manufacturer: ON Semiconductor

Specifications of NTZD5110NT1G

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 294mA
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 24.5pF @ 20V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.6 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.294 A
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2. Surface−mounted on FR4 board using 1 in. sq. pad size (Cu. area = 1.127 in sq [1 oz] including traces).
3. Pulse Test: pulse width v 300 ms, duty cycle v2%.
4. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
CHARGES AND CAPACITANCES
SWITCHING CHARACTERISTICS (Note 4)
DRAIN−SOURCE DIODE CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Parameter
(T
J
= 25°C unless otherwise noted.)
V
V
V
(BR)DSS
Symbol
V
GS(TH)
Q
R
Q
t
(BR)DSS
C
C
t
d(OFF)
GS(TH)
I
I
C
G(TOT)
Q
Q
d(ON)
DS(on)
V
g
G(TH)
DSS
GSS
OSS
RSS
FS
ISS
t
t
SD
GS
GD
r
f
/T
http://onsemi.com
/T
J
J
I
V
V
V
V
V
V
V
S
V
V
V
V
V
V
V
I
V
2
V
D
DS
DS
DS
GS
GS
DS
GS
DS
DS
GS
GS
GS
GS
= 200 mA
GS
GS
GS
= 200 mA, R
= 60 V
= 50 V
= 0 V, V
= 5.0 V, I
= 4.5 V, V
= 10 V, I
= 4.5 V, I
Test Condition
= 0 V, V
= 0 V, V
= 10 V, V
= 0 V,
= 0 V
= 0 V
= 0 V, f = 1.0 MHz,
= V
= 0 V, I
I
V
D
DS
DS
= 200 mA
, I
= 20 V
−
−
GS
GS
GS
D
D
D
D
D
DD
DS
= 250 mA
= 250 mA
= 200 mA
= 500 mA
= 200 mA
= "5.0 V
G
= "20 V
= "10 V
= 30 V,
T
= 10 V;
= 10 W
T
T
T
T
J
J
J
J
J
= 125°C
= 25°C
= 25°C
= 25°C
= 85°C
Min
1.0
60
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
1.19
1.33
24.5
63.7
30.6
Typ
4.0
4.2
2.2
0.7
0.1
0.3
0.1
7.3
0.8
0.7
71
80
12
−
−
−
−
−
−
−
−
"10
Max
500
100
450
150
1.0
2.5
1.6
2.5
1.2
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
mV/°C
mV/°C
Unit
nA
nA
nA
nC
mA
mA
pF
ns
W
V
V
S
V