NTJD4401NT1G ON Semiconductor, NTJD4401NT1G Datasheet - Page 3
![MOSFET 2N-CH 20V 630MA SOT-363](/photos/1/38/13878/sc-70-6_sc-88_sot-363_419b___02_sml.jpg)
NTJD4401NT1G
Manufacturer Part Number
NTJD4401NT1G
Description
MOSFET 2N-CH 20V 630MA SOT-363
Manufacturer
ON Semiconductor
Type
Small Signalr
Specifications of NTJD4401NT1G
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
375 mOhm @ 630mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
630mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
3nC @ 4.5V
Input Capacitance (ciss) @ Vds
46pF @ 20V
Power - Max
270mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.375 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
2 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
0.91 A
Power Dissipation
550 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
2
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.375Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±12V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
6
Package Type
SC-88
Module Configuration
Dual
Continuous Drain Current Id
630mA
Drain Source Voltage Vds
20V
On Resistance Rds(on)
375mohm
Rds(on) Test Voltage Vgs
4.5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTJD4401NT1GOS
NTJD4401NT1GOS
NTJD4401NT1GOSTR
NTJD4401NT1GOS
NTJD4401NT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTJD4401NT1G
Manufacturer:
ON
Quantity:
6 000
Company:
Part Number:
NTJD4401NT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
NTJD4401NT1G
Manufacturer:
ON/安森美
Quantity:
20 000
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.4
1.2
0.8
0.6
0.4
0.2
0
1
0
0
0
1.8
1.6
1.4
1.2
0.8
0.6
Figure 3. On-Resistance vs. Drain Current and
-50
2
1
V
GS
V
I
V
and 2.5 V
= 4.5 V
0.2
DS
D
Figure 1. On-Region Characteristics
GS
= 0.63 A
-25
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with
V
= 4.5 V
2
V
GS
GS
I
D,
0.4
T
= 2 V
J
= 4.5 V to 2.2 V
DRAIN CURRENT (AMPS)
, JUNCTION TEMPERATURE (°C)
0
Temperature
TYPICAL PERFORMANCE CURVES
4
0.6
25
T
T
T
J
J
J
Temperature
= 125°C
= 25°C
= -55°C
50
0.8
6
1.8 V
1.2 V
1.6 V
1.4 V
75
1
T
100
J
8
= 25°C
1.2
http://onsemi.com
125
NTJD4401N
1.4
10
150
3
1.2
0.8
0.6
0.4
0.2
0.7
0.6
0.5
0.4
0.3
0.2
0.1
80
60
40
20
(T
1
0
0
0
0
J
0
0
Figure 4. On-Resistance vs. Drain Current and
= 25°C unless otherwise noted)
V
V
DS
GS
V
≥ 10 V
= 2.5 V
0.2
0.4
GS
DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 6. Capacitance Variation
I
5
D,
0.4
DRAIN CURRENT (AMPS)
0.8
Temperature
25°C
T
T
T
T
0.6
J
J
J
J
= 125°C
= 125°C
= 25°C
= -55°C
1.2
10
0.8
C
C
C
T
iss
oss
rss
J
1.6
= -55°C
1
15
T
V
J
GS
2
1.2
= 25°C
= 0 V
20
2.4
1.4