NTJD4158CT1G ON Semiconductor, NTJD4158CT1G Datasheet
NTJD4158CT1G
Specifications of NTJD4158CT1G
NTJD4158CT1GOSTR
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NTJD4158CT1G Summary of contents
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... A S −0.48 T 260 °C L Symbol Max Unit 460 R °C/W qJA NTJD4158CT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 http://onsemi.com R Typ I Max (BR)DSS DS(on 4.5 V N− ...
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ELECTRICAL CHARACTERISTICS Parameter Symbol OFF CHARACTERISTICS (Note 3) Drain−to−Source V (BR)DSS Breakdown Voltage Drain−to−Source Breakdown V (BR)DSS Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V Negative Gate Threshold V ...
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TYPICAL N−CHANNEL PERFORMANCE CURVES 0.16 2.4 V 0.14 0.12 0.1 0.08 0.06 0.04 0. 0.25 0.5 0. DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS ...
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TYPICAL N−CHANNEL PERFORMANCE CURVES iss C 30 rss GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. ...
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TYPICAL P−CHANNEL PERFORMANCE CURVES −4.5, −3.5 & −2 −2 V 0.75 0.5 0. 0.4 0.8 1.2 −V , DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0 −4 ...
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TYPICAL P−CHANNEL PERFORMANCE CURVES 350 iss 300 250 C rss 200 150 100 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure ...
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... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...