NTUD3169CZT5G ON Semiconductor, NTUD3169CZT5G Datasheet - Page 4

• Manufacturer Part Number: NTUD3169CZT5G
• Description: MOSFET N/P-CH 20V SOT-963
• Manufacturer: ON Semiconductor

Specifications of NTUD3169CZT5G

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 100mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 220mA, 200mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Input Capacitance (ciss) @ Vds: 12.5pF @ 15V
• Power - Max: 125mW
• Mounting Type: Surface Mount
• Package / Case: SOT-963
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 1.5 Ohm @ 4.5 V @ N Channel
• Forward Transconductance Gfs (max / Min): 0.48 S, 0.35 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.22 A @ N Channel or 0.2 A @ P Channel
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

0.4
0.3
0.2
0.1
1.75
1.50
1.25
1.00
0.75
0.50
0
4
3
2
1
0
0
0
−50
Figure 3. On−Resistance vs. Gate Voltage
Figure 5. On−Resistance Variation with
Figure 1. On−Region Characteristics
I
V
1.8 V
D
−25
V
V
GS
DS
= 100 mA
GS
1
1
, DRAIN−TO−SOURCE VOLTAGE (V)
= 4.5 V
, GATE−TO−SOURCE VOLTAGE (V)
T
V
J
GS
, JUNCTION TEMPERATURE (°C)
0
= 2 thru 5 V
Temperature
2
2
25
50
TYPICAL CHARACTERISTICS (N−CHANNEL)
3
3
75
T
J
I
T
D
= 25°C
J
100
= 220 mA
= 25°C
4
4
1.6 V
1.4 V
1.2 V
http://onsemi.com
125
5
5
150
4
10,000
1000
1.50
1.25
1.00
0.75
0.50
0.25
100
0.4
0.3
0.2
0.1
10
0
0
0.05
0
0
Figure 4. On−Resistance vs. Drain Current and
Figure 6. Drain−to−Source Leakage Current
T
V
V
J
GS
DS
= 25°C
0.10
V
V
= 0 V
Figure 2. Transfer Characteristics
≥ 5 V
DS
GS
4
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
0.15
I
D
, DRAIN CURRENT (A)
T
1
J
T
T
Gate Voltage
J
J
= 25°C
vs. Voltage
T
V
8
0.20
V
= 150°C
= 125°C
J
GS
GS
= −55°C
= 2.5 V
= 4.5 V
0.25
12
2
0.30
T
J
= 125°C
16
0.35
0.40
20
3