NTHD3102CT1G ON Semiconductor, NTHD3102CT1G Datasheet - Page 4

• Manufacturer Part Number: NTHD3102CT1G
• Description: MOSFET N/P-CH COMPL 20V CHIPFET
• Manufacturer: ON Semiconductor

Specifications of NTHD3102CT1G

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 4.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4A, 3.1A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 7.9nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 510pF @ 10V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-ChipFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTHD3102CT1G; NTHD3102CT1GOSTR

ELECTRICAL CHARACTERISTICS
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Parameter
(continued) (T
Symbol
Q
V
t
RR
t
t
SD
RR
a
b
N/P
N
P
N
P
N
P
N
P
N
P
J
http://onsemi.com
= 25°C unless otherwise noted)
NTHD3102C
V
GS
dI
S
4
= 0 V, T
V
/ dt = 100 A/ms
GS
= 0 V,
Test Conditions
J
= 25 °C
I
I
I
I
I
I
S
I
S
I
S
I
S
I
S
S
S
S
S
S
= −1.7 A
= −1.7 A
= −1.7 A
= −1.7 A
= −1.7 A
= 1.7 A
= 1.7 A
= 1.7 A
= 1.7 A
= 1.7 A
Min
0.68
−0.7
13.5
12.6
Typ
8.6
8.4
4.9
4.2
7.0
6.0
Max
−1.2
1.2
Unit
nC
ns
V