IRF7501TR International Rectifier, IRF7501TR Datasheet
IRF7501TR
Specifications of IRF7501TR
IRF7501
IRF7501CT
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IRF7501TR Summary of contents
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... Available in Tape & Reel Fast Switching Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...
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IRF7501 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...
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VGS TOP 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V 10 BOTTOM 1.5V 1 0.1 1.5V 20µ 25°C J 0.01 0 rain-to-Source V oltage (V) D ...
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IRF7501 2 1.7A D 1.5 1.0 0.5 0.0 -60 -40 - Junction T em perature (° Fig 5. Normalized On-Resistance Vs. Temperature 0.13 0.11 0.09 0.07 0.05 4 0.8 0.6 ...
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oss ds gd 400 C iss ...
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IRF7501 Micro8 Package Outline 0 ...
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Tape & Reel Dimensions are shown in millimeters (inches ...