NDS9957 Fairchild Semiconductor, NDS9957 Datasheet - Page 2

• Manufacturer Part Number: NDS9957
• Description: MOSFET 2N-CH 60V 2.6A 8-SOIC
• Manufacturer: Fairchild Semiconductor

Specifications of NDS9957

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 160 mOhm @ 2.6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2.6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 30V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: NDS9957TR

Electrical Characteristics
Symbol
OFF CHARACTERISTICS
BV
I
I
I
ON CHARACTERISTICS
V
R
I
g
DYNAMIC CHARACTERISTICS
C
C
C
SWITCHING CHARACTERISTICS
t
t
t
t
Q
Q
Q
DSS
GSSF
GSSR
D(on)
D(on)
r
D(off)
f
FS
GS(th)
DS(ON)
iss
oss
rss
g
gs
gd
DSS
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(Note 2)
(Note 2)
(T
A
= 25°C unless otherwise noted)
Conditions
V
V
V
V
V
V
V
V
V
V
V
V
V
I
D
f = 1.0 MHz
GS
DS
GS
GS
DS
GS
GS
GS
DS
DS
DD
GS
DS
= 2.6 A, V
= 0 V, I
= 48 V, V
= 20 V, V
= -20 V, V
= V
= 10 V, I
= 4.5 V, I
= 10 V, V
= 5 V, I
= 30 V, V
= 30 V, I
= 10 V,R
= 30 V,
GS
, I
D
D
D
= 250 µA
= 2.6 A
= 250 µA
D
D
GEN
GS
GS
DS
DS
GS
DS
D
= 2.6 A
= 1 A,
= 0 V
= 10 V
= 0 V
= 2.1 A
= 5 V
= 0 V
= 0 V,
= 6
T
T
T
A
A
A
= 125°C
= 125°C
= 125°C
Min
0.7
60
10
1
0.145
0.25
0.19
0.32
Typ
200
1.5
1.1
7.5
2.8
0.8
60
20
11
17
4
6
4
Max
-100
0.16
0.25
100
2.2
0.3
0.5
20
25
30
15
12
1
3
NDS9957.SAM
Units
pF
pF
pF
µA
nA
nA
nC
nC
nC
ns
ns
ns
ns
V
V
A
S