FDS3812 Fairchild Semiconductor, FDS3812 Datasheet - Page 3
![MOSFET N-CH 80V 3.4A 8SOIC](/photos/5/42/54236/261-8-soic_sml.jpg)
FDS3812
Manufacturer Part Number
FDS3812
Description
MOSFET N-CH 80V 3.4A 8SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS3812.pdf
(5 pages)
Specifications of FDS3812
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
74 mOhm @ 3.4A, 10V
Drain To Source Voltage (vdss)
80V
Current - Continuous Drain (id) @ 25° C
3.4A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 10V
Input Capacitance (ciss) @ Vds
634pF @ 40V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.074 Ohms
Forward Transconductance Gfs (max / Min)
14 S
Drain-source Breakdown Voltage
80 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.4 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDS3812AZ_NL
Manufacturer:
FAIRCHILD
Quantity:
5 000
Device #1 FAN5009M
Package:
#Leads:
Precondition Description:
Stress
PCNL1A
Environment Stress Detail:
Stress
HAST2
HTSL
TMCL1
Device #2 FAN5109M
Package:
#Leads:
Precondition Description:
P/C
X
X
X
-1
-1
-1
P/C
Standard
JESD22-A110 85%RH, 110C,
JESD22-A103 150C
JESD22-A104 -65C, 150C
Standard
JESD22-A113
Qualification Stress Test and Sample Size Detail
Conditions
0V
Conditions
Readpoints
TP1
264
168
100
TP2
500
500
TP3
1000
Read-
points
Samples
A
45
77
77
Sample
A
0
Pg. 3