FDS4935 Fairchild Semiconductor, FDS4935 Datasheet

MOSFET P-CH DUAL 30V 7A 8SOIC

FDS4935

Manufacturer Part Number
FDS4935
Description
MOSFET P-CH DUAL 30V 7A 8SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDS4935

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
23 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
21nC @ 5V
Input Capacitance (ciss) @ Vds
1233pF @ 15V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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FDS4935
Dual 30V P-Channel PowerTrench MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V – 25V).
Applications
2003 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
Power management
Load switch
Battery protection
J
DSS
GSS
D
D
, T
JA
JC
Device Marking
STG
FDS4935
Semiconductor’s
SO-8
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Pin 1
D
D2
D
D2
SO-8
advanced
D
D1
– Continuous
– Pulsed
D
FDS4935
D1
Device
Parameter
S2
S
PowerTrench
G2
S
S1
S
G1
G
T
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1c)
(Note 1)
Features
–7 A, –30 V
Low gate charge (15nC typical)
Fast switching speed
High performance trench technology for extremely
High power and current handling capability
low R
DS(ON)
5
6
7
8
Tape width
–55 to +175
12mm
Q1
Q2
R
R
Ratings
DS(ON)
DS(ON)
–30
–30
1.6
0.9
–7
78
40
25
2
1
= 23 m @ V
= 35 m @ V
4
3
2
1
June 2001
GS
GS
2500 units
FDS4935 Rev B(W)
Quantity
= –10 V
= –4.5 V
Units
C/W
C/W
W
V
V
A
C

Related parts for FDS4935

FDS4935 Summary of contents

Page 1

... C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) Reel Size 13’’ June 2001 –10 V DS(ON –4.5 V DS(ON Ratings Units – –7 A – 0.9 –55 to +175 C 78 C/W 40 C/W Tape width Quantity 12mm 2500 units FDS4935 Rev B(W) ...

Page 2

... CA b) 125°C/W when mounted pad copper Min Typ Max Units –30 V –24 mV/ C –1 A –100 nA 100 nA –1 –1.6 –3 V 4.4 mV – 1233 pF 311 pF 152 4.4 nC 4.5 nC –2.1 A –0.75 –1 135°C/W when mounted on a minimum pad. FDS4935 Rev B(W) ...

Page 3

... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. -4.0V -4.5V -5.0V -6.0V -10V DRAIN CURRENT ( -3. 125 GATE TO SOURCE VOLTAGE ( 125 -55 C 0.4 0.6 0.8 1 1.2 1.4 , BODY DIODE FORWARD VOLTAGE (V) SD FDS4935 Rev B(W) ...

Page 4

... Figure 8. Capacitance Characteristics. 50 100 s 1ms 40 10ms 100 0.001 Figure 10. Single Pulse Maximum 0.01 0 MHz ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 135°C 25°C A 0.01 0 TIME (sec) 1 Power Dissipation. R ( 135 °C/W JA P(pk ( Duty Cycle 100 FDS4935 Rev B(W) 30 100 2 1000 ...

Page 5

CROSSVOLT â â â â â Rev. I2 ...

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