FDS9933 Fairchild Semiconductor, FDS9933 Datasheet
FDS9933
Manufacturer Part Number
FDS9933
Description
MOSFET P-CH DUAL 20V 5A 8SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS9933.pdf
(5 pages)
Specifications of FDS9933
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
55 mOhm @ 3.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
1.2V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 4.5V
Input Capacitance (ciss) @ Vds
825pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
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FAIRCHILD/仙童
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20 000
Part Number:
FDS9933BZ
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDS9933
Dual P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild
process. It has been optimized for power management
applications with a wide range of gate drive voltage
(2.5V – 12V).
Applications
2006 Fairchild Semiconductor International
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
J
DSS
GSS
D
, T
JA
JC
Load switch
Motor drive
DC/DC conversion
Power management
Device Marking
STG
Semiconductor’s
9933
SO-8
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Pin 1
D
D2
D
D2
SO-8
advanced
D
D1
– Continuous
– Pulsed
D
FDS9933
D1
Device
Parameter
S2
S
PowerTrench
G2
S
S1
S
G1
G
T
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1)
Features
–5 A, –20 V,
Extended V
Low gate charge
High performance trench technology for extremely
High power and current handling capability
low R
DS(ON)
5
6
7
8
GSS
Tape width
R
R
range ( 12V) for battery applications
DS(ON)
DS(ON)
–55 to +175
12mm
Q1
Q2
Ratings
–20
–30
1.6
0.9
–5
78
40
12
2
1
= 55 m
= 90 m
@ V
@ V
September 2006
4
3
2
1
GS
GS
= –4.5 V
= –2.5 V
2500 units
Quantity
FDS9933 Rev C
Units
C/W
C/W
W
V
V
A
C
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FDS9933 Summary of contents
Page 1
... Reel Size 13’’ September 2006 –4.5 V DS(ON –2.5 V DS(ON) GS range ( 12V) for battery applications GSS Ratings Units – –5 A – 1.6 1 0.9 –55 to +175 C 78 C/W 40 C/W Tape width Quantity 12mm 2500 units FDS9933 Rev C ...
Page 2
... CA b) 125°C/W when mounted 0.02 in pad copper Min Typ Max Units –20 V –12 mV/ C –1 A ±100 nA –0.6 –0.8 –1 mV – 825 pF 420 pF 150 2.1 nC 3.3 nC –2.0 A –0.7 –1 135°C/W when mounted on a minimum pad. FDS9933 Rev C ...
Page 3
... T 0.1 0.01 0.001 0.0001 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. =-2.5V -3.0V -3.5V -4.0V -4. DRAIN CURRENT ( -2. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage. = 125 -55 C 0.4 0.8 1 BODY DIODE FORWARD VOLTAGE (V) SD FDS9933 Rev 1.6 ...
Page 4
... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec MHz iss C oss DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 135°C 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( 135 C/W JA P(pk ( Duty Cycle 100 1000 FDS9933 Rev C 20 ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ GlobalOptoisolator™ Bottomless™ GTO™ Build it Now™ HiSeC™ ...