ZXMD65P02N8TC Diodes Zetex, ZXMD65P02N8TC Datasheet - Page 2

• Manufacturer Part Number: ZXMD65P02N8TC
• Description: MOSFET DUAL P-CHAN 20V 8SOIC
• Manufacturer: Diodes Zetex

Specifications of ZXMD65P02N8TC

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 50 mOhm @ 2.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 960pF @ 15V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10 s - pulse width limited by maximum
junction temperature.
(d) For device with one active die.
(e) For device with two active die running at equal power.
ZXMD65P02N8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Gate- Source Voltage
Continuous Drain Current V
Pulsed Drain Current (c)(d)
Continuous Source Current (Body Diode)(b)(d)
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
PARAMETER
Junction to Ambient (a)(d)
Junction to Ambient (a)(e)
Junction to Ambient (b)(d)
Pulsed Source Current (Body Diode)(c)(d)
A
A
A
=25°C (a)(d)
=25°C (a)(e)
=25°C (b)(d)
V
V
GS
GS
GS
=-4.5V; T
=-4.5V; T
=-4.5V; T
A
A
A
=70°C (b)(d)
=25°C (a)(d)
=25°C (b)(d)
SYMBOL
R
R
R
JA
JA
JA
SYMBOL
V
V
I
I
I
I
P
P
P
D
DM
S
SM
D
D
D
DSS
GS
PROVISIONAL ISSUE A - MAY 2001
VALUE
71.4
62.5
100
LIMIT
1.25
1.75
-5.1
-4.1
-4.0
-3.1
-20
-18
-18
2.0
10
14
16
12
mW/°C
mW/°C
mW/°C
UNIT
°C/W
°C/W
°C/W
UNIT
W
W
W
V
V
A
A
A
A