USB10H Fairchild Semiconductor, USB10H Datasheet - Page 70
![MOSFET P-CH DUAL 20V SSOT6](/photos/5/42/54216/261-supersot-6_sml.jpg)
USB10H
Manufacturer Part Number
USB10H
Description
MOSFET P-CH DUAL 20V SSOT6
Manufacturer
Fairchild Semiconductor
Datasheet
1.USB10H.pdf
(214 pages)
Specifications of USB10H
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
170 mOhm @ 1.9A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
1.9A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
4.2nC @ 4.5V
Input Capacitance (ciss) @ Vds
441pF @ 10V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
6-SSOT, SuperSOT-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
USB10H
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
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- Download datasheet (4Mb)
www.fairchildsemi.com
TO-247
HUF75345G3
HUFA75345G3
HUF75344G3
HUFA75344G3
HUF75343G3
HUFA75343G3
HUF75339G3
HUFA75339G3
HUFA75337G3
HUFA75333G3
HUFA75332G3
HUFA75329G3
RFG70N06
FDH038AN08A1
FDH047AN08A0
HUF75652G3
HUFA75652G3
FQH140N10
FQH70N10
HUF75639G3
HUFA75639G3
FQH44N10
HUF75852G3
HUFA75852G3
FDH34N40
FDH44N50
FQH18N50V2
FDH15N50
TO-247 N-Channel
Products
Min. (V)
BV
100
100
100
100
100
100
100
150
150
400
500
500
500
55
55
55
55
55
55
55
55
55
55
55
55
60
75
75
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.0038
0.0047
0.007
0.007
0.008
0.008
0.009
0.009
0.012
0.012
0.014
0.016
0.019
0.024
0.014
0.008
0.008
0.023
0.025
0.025
0.039
0.016
0.016
0.115
0.265
10V
0.01
0.12
0.38
R
0.0071@6V
0.0087@6V
DS(ON)
4.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-65
2.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
Bold = New Products (introduced January 2003 or later)
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
125
125
100
125
211
211
220
215
215
GS
90
90
92
92
60
60
51
40
40
35
92
85
57
57
48
57
90
33
–
=5V
I
D
140
75
75
75
75
75
75
75
75
75
66
60
49
70
80
80
75
75
70
56
56
48
75
75
34
44
20
15
(A)
MOSFETs
P
D
325
325
285
285
270
270
200
200
175
145
145
128
150
450
310
515
515
375
214
200
200
500
500
469
625
277
300
–
(W)
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