This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
... –0.83 A (Note determined by the user's board design. CA Min Typ Max Units –20 V –16 mV/ C –1 A –100 nA 100 nA –0.6 –1.0 –1 mV/ C 0.036 0.043 0.056 0.070 0.049 0.069 –15 A 13.2 S 1030 pF 280 pF 120 9 2.2 nC 2.4 nC –0.83 A –0.7 –1.2 V FDW2504P Rev. E1 (W) ...
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = -2.5V -3.0V -3.5V -4.0V -4. DRAIN CURRENT ( -1. 125 2.5 3 3 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDW2504P Rev. E1 (W) 5 1.4 ...
... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec 1MHz ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 208°C 25°C A 0.01 0 TIME (sec) 1 Power Dissipation. R ( 208 °C/W JA P(pk ( Duty Cycle 100 1000 FDW2504P Rev. E1 (W) 20 100 ...
... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended exhaustive list of all such trademarks. Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ ...