HUF76407DK8T Fairchild Semiconductor, HUF76407DK8T Datasheet
HUF76407DK8T
Specifications of HUF76407DK8T
Related parts for HUF76407DK8T
HUF76407DK8T Summary of contents
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... Switching Time vs R Ordering Information DRAIN 2 (6) PART NUMBER DRAIN 2 (5) HUF76407DK8 NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUF76407DK8T Unless Otherwise Specified (490 copper pad at 1 second. ...
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... Gate to Drain “Miller” Charge CAPACITANCE SPECIFICATIONS Input Capacitance Output Capacitance Reverse Transfer Capacitance Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ©2001 Fairchild Semiconductor Corporation o C, Unless Otherwise Specified SYMBOL TEST CONDITIONS 250 (Figure 12) DSS ...
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... FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE 200 100 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION ©2001 Fairchild Semiconductor Corporation 100 125 150 o C) FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs SINGLE PULSE - RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) FIGURE 4. PEAK CURRENT CAPABILITY ...
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... DUTY CYCLE = 0.5% MAX I = 3.8A D 120 GATE TO SOURCE VOLTAGE (V) GS FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT ©2001 Fairchild Semiconductor Corporation (Continued) 50 SINGLE PULSE T = MAX RATED 100 s 1ms 10ms 1 100 200 NOTE: Refer to Fairchild Application Notes AN9321 and AN9322. ...
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... V , DRAIN TO SOURCE VOLTAGE (V) DS FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 4.5V 30V 1. d(OFF GATE TO SOURCE RESISTANCE ( ) GS FIGURE 15. SWITCHING TIME vs GATE RESISTANCE ©2001 Fairchild Semiconductor Corporation (Continued 250 120 160 o C) FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN ISS RSS NOTE: Refer to Fairchild Application Notes AN7254 and AN7260. ...
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... Test Circuits and Waveforms VARY t TO OBTAIN P R REQUIRED PEAK FIGURE 17. UNCLAMPED ENERGY TEST CIRCUIT g(REF) FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 21. SWITCHING TIME TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation DUT 0. DUT g(REF DUT DSS FIGURE 18. UNCLAMPED ENERGY WAVEFORMS Q g(TOT) ...
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... JA times a cofficient added to a constant. The area, in square inches is the top copper area including the gate and source pads 103.2 24.3 – Area JA ©2001 Fairchild Semiconductor Corporation , and the C/ never exceeded. (EQ. 1) FIGURE 23. THERMAL RESISTANCE vs MOUNTING PAD AREA ...
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... FIGURE 24. THERMAL RESISTANCE vs MOUNTING PAD AREA ©2001 Fairchild Semiconductor Corporation ) is also effected by Copper pad area has no perceivable effect on transient JA thermal impedance for pulse widths less than 100ms. For pulse widths less than 100ms the transient thermal impedance is determined by the die and package. Therefore, CTHERM1 through CTHERM5 and RTHERM1 through RTHERM5 remain constant for each of the thermal models ...
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... NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley. ©2001 Fairchild Semiconductor Corporation REV 28 May 1999 DPLCAP ...
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... Fairchild Semiconductor Corporation DPLCAP 10 RSLC2 - 6 ESG 8 EVTHRES + ...
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... COMPONENT 0.02 in CTHERM6 9.0e-2 CTHERM7 4.0e-1 CTHERM8 1.4 RTHERM6 RTHERM7 RTHERM8 ©2001 Fairchild Semiconductor Corporation RTHERM1 RTHERM2 RTHERM3 RTHERM4 RTHERM5 RTHERM6 RTHERM7 RTHERM8 TABLE 1. THERMAL MODELS 2 2 0.14 in 1.3e-1 6.0e-1 2 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...