FDW2521C Fairchild Semiconductor, FDW2521C Datasheet - Page 6

• Manufacturer Part Number: FDW2521C
• Description: MOSFET N/P 20V 5.5/2.8A 8-TSSOP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDW2521C

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21 mOhm @ 5.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.5A, 3.8A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1082pF @ 10V
• Power - Max: 600mW
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics: Q2
30
24
18
12
30
24
18
12
6
0
6
0
Figure 13. On-Resistance Variation with
0.4
1.6
1.4
1.2
0.8
0.6
Figure 11. On-Region Characteristics.
0
1
Figure 15. Transfer Characteristics.
-50
V
DS
V
GS
V
= -5.0V
I
GS
D
= -4.5V
-4.0V
= -3.8A
-25
= -4.5V
1
-V
1.3
GS
-V
T
, GATE TO SOURCE VOLTAGE (V)
DS
0
J
-3.5V
Temperature.
, JUNCTION TEMPERATURE (
, DRAIN-SOURCE VOLTAGE (V)
-3.0V
25
2
2.2
-2.5V
50
T
A
= -55
3
75
o
C
-2.0V
3.1
100
o
C)
125
4
o
C
25
125
o
C
150
4
5
Figure 16. Body Diode Forward Voltage Variation
0.15
0.12
0.09
0.06
0.03
0.0001
0.001
Figure 12. On-Resistance Variation with
Figure 14. On-Resistance Variation with
1.6
1.4
1.2
0.8
0.01
0
100
with Source Current and Temperature.
0.1
1
10
1.5
1
0
0
Drain Current and Gate Voltage.
V
V
GS
GS
= 0V
2
Gate-to-Source Voltage.
= -2.5V
0.2
5
T
A
-V
= 25
-V
SD
GS
, BODY DIODE FORWARD VOLTAGE (V)
T
2.5
o
-3.0V
- I
, GATE TO SOURCE VOLTAGE (V)
A
C
0.4
10
= 125
D
, DRAIN CURRENT (A)
T
A
o
C
-3.5V
= 125
3
0.6
25
15
o
o
C
C
-4.0V
3.5
0.8
-55
20
o
C
-4.5V
4
1
25
I
FDW2521C Rev D1(W)
D
= -1.9A
4.5
1.2
30
1.4
5