FDZ2553NZ Fairchild Semiconductor, FDZ2553NZ Datasheet - Page 2

• Manufacturer Part Number: FDZ2553NZ
• Description: MOSFET N-CH 20V 9.6A BGA
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDZ2553NZ

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14 mOhm @ 9.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 9.6A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 5V
• Input Capacitance (ciss) @ Vds: 1240pF @ 10V
• Power - Max: 2.1W
• Mounting Type: Surface Mount
• Package / Case: 12-BGA (18 pos)
• Configuration: Dual Common Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.012 Ohms
• Forward Transconductance Gfs (max / Min): 45 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 9.6 A
• Power Dissipation: 2.1 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1. R
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
Notes:
Electrical Characteristics
Symbol
Off Characteristics
BV
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
R
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
t
Q
DSS
GSS
D(on)
S
d(on)
r
d(off)
f
rr
the circuit board side of the sol der ball, R
copper chip carrier. R
FS
BV
V
DS(on)
iss
oss
rss
G
GS(th)
g
gs
gd
SD
rr
(a). R
(b). R
JA
DSS
GS(th)
TJ
TJ
DSS
is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to
JA
JA
= 60°C/W when mounted on a 1in
= 108°C/W when mounted on a minimum pad of 2 oz copper
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
JC
and R
Parameter
JB
are guaranteed by design while R
(Note 2)
JB
, is defined for reference. For R
2
pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB
(Note 2)
V
ID = 250 A, Referenced to 25 C
V
V
V
ID = 250 A, Referenced to 25 C
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
V
I
d
T
F
A
iF
GS
DS
GS
DS
GS
GS
GS
GS
DS
DS
GS
DD
GS
DS
GS
GS
= 9.6A,
JA
/d
= 25°C unless otherwise noted
= 16 V,
= V
= 5 V,
= 10 V,
= 10 V,
= 0 V,
= 12 V,
= 4.5 V,
= 2.5 V,
= 4.5 V, I
= 4.5 V,
= 15 mV, f = 1.0 MHz
= 10 V,
= 4.5 V,
= 5 V
= 0 V, I
t
is determined by the user's board design.
= 100 A/µs
Test Conditions
JC
G S
, the thermal reference point for the case is defined as the top surface of the
,
D
S
= 9.6 A, T
= 1.7 A
I
V
V
I
I
I
V
I
V
I
R
I
D
D
D
D
D
D
D
GS
DS
GEN
DS
= 250 A
= 250 A
= 9.6 A
= 7.9 A
= 9.6 A
GS
= 1 A,
= 9.6 A,
= 0 V
= 0 V
= 5 V
= 0 V,
= 6
J
=125 C
(Note 2)
Min
0.6
20
10
Typ Max Units
1240
–0.3
320
170
0.9
2.1
0.7
12
12
16
16
20
45
10
14
26
11
13
20
3
3
6
1.5
1.7
1.2
14
20
24
20
26
42
19
18
FDZ2553NZ Rev C (W)
1
10
mV/ C
mV/ C
m
nC
nC
nC
nS
nC
pF
pF
pF
ns
ns
ns
ns
V
V
A
S
A
V
A
A