DMN5L06DW-7 Diodes Inc, DMN5L06DW-7 Datasheet

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DMN5L06DW-7

Manufacturer Part Number
DMN5L06DW-7
Description
MOSFET N-CHAN DUAL 200MW SOT-363
Manufacturer
Diodes Inc
Datasheet

Specifications of DMN5L06DW-7

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3 Ohm @ 200mA, 2.7V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
280mA
Vgs(th) (max) @ Id
1.2V @ 250µA
Input Capacitance (ciss) @ Vds
50pF @ 25V
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Other names
DMN5L06DWDITR
Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Drain-Source Voltage
Drain-Gate Voltage R
Gate-Source Voltage
Drain Current (Note 1)
Drain Current (Note 1)
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Features
Notes:
DMN5L06DW
Document number: DS30751 Rev. 2 - 2
Dual N-Channel MOSFET
Low On-Resistance
Very Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 2)
“Green” Device (Note 3)
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Short duration pulse test used to minimize self-heating effect.
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
GS
≤ 1.0MΩ
Characteristic
Characteristic
Characteristic
@T
A
= 25°C unless otherwise specified
@T
@T
A
A
= 25°C unless otherwise specified
= 25°C unless otherwise specified
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Continuous
Pulsed
Continuous
Pulsed
@ T
@ T
TOP VIEW
C
C
= 125°C
= 25°C
www.diodes.com
SOT-363
Symbol
R
BV
V
I
DS (ON)
I
I
D(ON)
|Y
C
1 of 5
V
C
C
GS(th)
GSS
DSS
SD
oss
rss
DSS
iss
fs
|
Mechanical Data
Symbol
Symbol
T
V
V
V
j,
R
I
P
DGR
GSS
DM
T
DSS
I
0.49
θ JA
Min
200
D
0.5
0.5
50
d
STG
Case: SOT-363
Case Material: Molded Plastic, "Green" Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Finish ⎯ Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering & Date Code Information: See Page 4
Weight: 0.006 grams (approximate)
Internal Schematic
D
S
Typ Max
2
2
TOP VIEW
1.6
2.2
1.0
G
G
1
2
500
±20
0.1
1.2
1.4
5.0
50
25
3
4
S
D
1
1
Unit
mS
µA
nA
pF
pF
pF
-55 to +150
V
V
Ω
A
V
Value
Value
±20
±40
280
200
833
1.5
50
50
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
GS
DS
GS
DS
GS
GS
GS
DS
GS
DS
= 50V, V
= V
=10V, I
= 25V, V
= 0V, I
= ±20V, V
= 2.7V, I
= 1.8V, I
= 10V, V
= 0V, I
GS
, I
D
S
Test Condition
D
D
= 115mA
= 10μA
D
D
GS
DS
GS
= 0.2A
= 250μA
DS
= 0.2A,
= 50mA
DMN5L06DW
= 0V
= 7.5V
= 0V
= 0V
© Diodes Incorporated
September 2007
Units
Units
°C/W
mW
mA
°C
V
V
V
A

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DMN5L06DW-7 Summary of contents

Page 1

... GS(th) ⎯ 1 (ON) ⎯ 2.2 0.5 1.0 I D(ON) ⎯ 200 | ⎯ V 0.5 SD ⎯ ⎯ C iss ⎯ ⎯ C oss ⎯ ⎯ C rss www.diodes.com DMN5L06DW Value Units ±20 V ±40 280 mA 1.5 A Value Units 200 mW 833 °C/W -55 to +150 °C Unit Test Condition ⎯ V ...

Page 2

... Document number: DS30751 Rev 10V 0.1 75 100 125 150 Fig. 4 Static Drain-Source On-Resistance vs. Drain Current www.diodes.com DMN5L06DW V , GATE-SOURCE VOLTAGE (V) GS Fig. 2 Typical Transfer Characteristics I DRAIN CURRENT ( GATE SOURCE VOLTAGE (V) GS, Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage September 2007 © Diodes Incorporated ...

Page 3

... Static Drain-Source On-State Resistance vs. Channel Temperature 250 200 150 100 AMBIENT TEMPERATURE ( C) A Fig. 11 Derating Curve - Total DMN5L06DW Document number: DS30751 Rev ° 1 Fig.10 Forward Transfer Admittance vs. Drain Current 100 150 ° www.diodes.com DMN5L06DW DRAIN CURRENT (A) D September 2007 © Diodes Incorporated ...

Page 4

... Ordering Information (Note 5) Part Number DMN5L06DW-7 Notes: 5. For packaging details our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Notes: 6. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways). Date Code Key Year 2005 2006 Code S Month Jan Feb ...

Page 5

... Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DMN5L06DW Document number: DS30751 Rev IMPORTANT NOTICE LIFE SUPPORT www.diodes.com DMN5L06DW September 2007 © Diodes Incorporated ...

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