SIB911DK-T1-E3 Vishay, SIB911DK-T1-E3 Datasheet - Page 8

• Manufacturer Part Number: SIB911DK-T1-E3
• Description: MOSFET P-CH 20V PWRPAK SC75-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SIB911DK-T1-E3

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 295 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 4nC @ 8V
• Input Capacitance (ciss) @ Vds: 115pF @ 10V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK SC-75-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SIB911DK-T1-E3TR

RECOMMENDED PAD LAYOUT FOR PowerPAK
Document Number: 70489
Revision: 28-Oct-08
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2.2
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2.2
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SC75-6L Dual
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1.25
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Application Note 826
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Vishay Siliconix
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www.vishay.com
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