BZT52B9V1 Taiwan Semiconductor, BZT52B9V1 Datasheet - Page 3

• Manufacturer Part Number: BZT52B9V1
• Description: Zener Diodes 9.1 Volt 410mW 2%
• Manufacturer: Taiwan Semiconductor

Specifications of BZT52B9V1

• Zener Voltage: 9.1 V
• Voltage Tolerance: 2 %
• Power Dissipation: 500 mW
• Maximum Reverse Leakage Current: 0.45 uA
• Maximum Zener Impedance: 15 Ohms
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOD-123F
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: RH

250
200
150
100
50
30
20
10
0
0
0
0
FIG.3- ZENER BREAKDOWN CHARACTERISTICS
FIG.1- POWER DERATING CURVE
T = 25 C
Test Current I
j
T , AMBIENT TEMPERATURE, ( C)
5mA
RATINGS AND CHARACTERISTIC CURVES (BZT52C2V4S THRU BZT52C75S)
A
O
V , ZENER VOLTAGE (V)
10
Z
Z
C10
C12
C15
C18
100
20
C22
C27
See Note 1
30
Test Current I
C33
2mA
O
C36
Z
200
40
C39
1000
100
50
40
30
20
10
10
0
0
1
FIG.4- JUNCTION CAPACITANCE VS NOMINAL
FIG.2- ZENER BREAKDOWN CHARACTERISTICS
T = 25 C
Test Current I
V , NOMINAL ZENER VOLTAGE (V)
j
Z
5.0mA
1
V = 2V
R
ZENER VOLTAGE
O
2
V , ZENER VOLTAGE (V)
Z
Z
V = 1V
R
3
C2V7
V = 2V
R
C3V3
4
10
V = 1V
C3V9
R
C4V7
5
C5V6
6
Version:B08
C6V8
T = 25 C
j
7
O
8
C8V2
100
9 10