IRF7106 International Rectifier, IRF7106 Datasheet - Page 2

• Manufacturer Part Number: IRF7106
• Description: HEX/MOS N/P-CH DL 20/-20V 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7106

• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 125 mOhm @ 1A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A, 2.5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 300pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRF7106
Electrical Characteristics @ T
Notes:
Source-Drain Ratings and Characteristics
V
R
V
g
I
I
Q
Q
Q
t
t
t
t
L
L
C
C
t
I
I
V
t
Q
DSS
f
GSS
d(on)
r
d(off)
S
SM
rr
on
fs
(BR)DSS
V
GS(th)
D
S
DS(ON)
iss
rss
SD
g
gs
gd
rr
Repetitive rating; pulse width limited by
(BR)DSS
max. junction temperature. ( See fig. 23 )
/ T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Imput Capacitance
C
Reverse Transfer Capacitance
Forward Turn-On Time
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Internal Drain Inductace
Internal Source Inductance
oss
Output Capacitance
Parameter
Parameter
J
= 25°C (unless otherwise specified)
N-Channel I
P-Channel I
Pulse width
N-Ch 20
N-Ch — 0.037 —
N-Ch
P-Ch
N-Ch 1.0
N-Ch —
N-Ch —
N-Ch —
N-Ch —
N-Ch —
N-Ch —
N-Ch —
N-Ch —
N-Ch —
N-Ch —
N-Ch —
N-Ch —
N-Ch —
N-Ch —
N-Ch —
N-Ch —
N-Ch —
N-Ch —
P-Ch -20
P-Ch — -0.022 —
P-Ch -1.0
P-Ch —
P-Ch —
P-Ch —
P-Ch —
P-Ch —
P-Ch —
P-Ch —
P-Ch —
P-Ch —
P-Ch —
P-Ch —
P-Ch —
P-Ch —
P-Ch —
P-Ch —
P-Ch — -0.90 -1.6
P-Ch —
P-Ch —
N-P
N-P
N-P
N-P
70
Min. Typ. Max. Units
Min. Typ. Max. Units
Intrinsic turn-on time is neglegible (turn-on is dominated by L
––
—
—
—
—
—
—
SD
SD
0.90 1.2
300
280
260
250
4.4
3.0
9.1
1.2
1.6
2.5
3.5
5.0
4.0
6.0
11
10
10
15
29
41
22
39
62
86
69
69
58
91
—
—
— 0.125
—
—
—
—
—
—
—
—
—
— ±100 nA
—
—
—
—
300µs; duty cycle
-2.3A, di/dt
2.3A, di/dt
0.25
0.20
0.35
-2.0
-1.6
100
100
120
180
2.0
-25
1.7
-10
25
25
25
15
40
20
40
50
90
50
60
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
V/°C
µA
nC
nH
pF
nC
ns
ns
V
V
S
A
V
N-Channel
V
R
P-Channel
V
R
N-Channel
V
P-Channel
V
V
V
Reference to 25°C, I
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
V
V
V
N-Channel
I
P-Channel
I
Between lead tip
and center of die contact
T
T
N-Channel
T
P-Channel
T
D
D
100A/µs, V
DD
DD
GS
GS
50A/µs, V
GS
GS
GS
GS
GS
GS
DS
DS
DS
DS
DS
DS
DS
DS
GS
D
D
J
J
J
J
= 2.3A, V
= -2.3A, V
= 25°C, I
= 25°C, I
= 25°C, I
= 25°C, I
= 20
= 20
= V
= V
= 15V, I
= -15V, I
= 16V, V
= -16V, V
= 16V, V
= -16V, V
= 20V, I
= -20V, I
= 0V, V
= 0V, V
= 0V, I
= 0V, I
= 10V, I
= 4.5V, I
= -10V, I
= -4.5V, I
= ± 20V
2%.
GS
GS
, I
, I
D
D
DS
DS
DS
F
F
D
D
D
D
D
DS
S
S
DD
= 250µA
D
D
= -250µA
D
D
GS
DD
GS
= 1.25A, di/dt = 100A/µs
= -1.25A, di/dt = 100A/µs
D
GS
GS
= 250µA
= -250µA
= 3.0A
= 1.0A, R
= 1.6A, V
= -1.3A, V
= 1.0A
Conditions
= 10V, V
= 0.50A
= -1.0A, R
= -1.0A
= -3.0A
= 15V, ƒ = 1.0MHz
= -15V, ƒ = 1.0MHz
= -10V, V
= -0.50A
= 0V, T
= 0V
= 0V, T
= 0V
V
V
(BR)DSS
(BR)DSS
D
D
Conditions
= 1mA
= -1mA
GS
GS
J
G
GS
J
GS
= 125°C
G
= 6.0
= 125°C
= 10V
= 0V
= 6.0 ,
= 0V
, T
= -10V
, T
J
J
150°C
150°C
S
+L
D
)