IRF7471 International Rectifier, IRF7471 Datasheet

MOSFET

IRF7471

Manufacturer Part Number

IRF7471

Description

MOSFET

Manufacturer

International Rectifier

Datasheets

1.IRF7471.pdf (8 pages)

2.IRF7471.pdf (8 pages)

Specifications of IRF7471

Transistor Polarity

N Channel

Continuous Drain Current Id

10A

Drain Source Voltage Vds

40V

On Resistance Rds(on)

13mohm

Rds(on) Test Voltage Vgs

10V

Power Dissipation Pd

2.5W

No. Of Pins

8

Thermal Resistance

50Â°C/W

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

IRF7471PBF

Manufacturer:

IR

Quantity:

15 600

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

IRF7471TRPBF

Manufacturer:

VICOR

Quantity:

100

Company:

Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

IRF7471TRPBF

Manufacturer:

IR

Quantity:

20 000

Current page: 1 of 8
Download datasheet (215Kb)

Absolute Maximum Ratings

Benefits

Thermal Resistance

Applications

Notes

www.irf.com

Symbol

V

V

I

I

I

P

P

T

Symbol

R

R

D

D

DM

DS

GS

D

D

J

@ T

@ T

and Current

, T

JL

JA

for Telecom and Industrial Use

Converters with Synchronous Rectification

High Frequency Isolated DC-DC

High Frequency Buck Converters for

Ultra-Low Gate Impedance

Very Low R

Fully Characterized Avalanche Voltage

@T

@T

Computer Processor Power

STG

A

A

A

A

= 25°C

= 70°C

= 25°C

= 70°C

through

DS(on)

Drain-Source Voltage

Continuous Drain Current, V

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation

Maximum Power Dissipation

Junction and Storage Temperature Range

Junction-to-Drain Lead

Junction-to-Ambient

Linear Derating Factor

Gate-to-Source Voltage

are on page 8

Parameter

Parameter

SMPS MOSFET

GS

GS

@ 10V

@ 10V

G

S

S

S

V

40V

1

2

3

4

DSS

T o p V ie w

Typ.

–––

–––

HEXFET

8

7

6

5

-55 to + 150

R

DS(on)

D

D

D

D

Max.

A

A

± 20

0.02

8.3

2.5

1.6

40

10

83

13m

®

Power MOSFET

Max.

max

20

50

IRF7471

SO-8

PD- 94036B

mW/°C

Units

Units

°C/W

10A

°C

I

W

W

V

A

V

D

1

3/25/01

Related parts for IRF7471

Related keywords

IRF7471 datasheet
IRF7471 data sheet
IRF7471 pdf datasheet
IRF7471 component
IRF7471 part
IRF7471 distributor
IRF7471 RoHS
IRF7471 datasheet download