IRF5851 International Rectifier, IRF5851 Datasheet - Page 8

• Manufacturer Part Number: IRF5851
• Description: MOSFET N/PCH 20V 2.7A/2.2A 6TSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF5851

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.7A, 2.2A
• Vgs(th) (max) @ Id: 1.25V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 400pF @ 15V
• Power - Max: 960mW
• Mounting Type: Surface Mount
• Package / Case: Micro6™(TSOP-6)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRF5851
0.01
8
100
0.1
0.1
10
10
Fig 16. Typical Output Characteristics
1
Fig 18. Typical Transfer Characteristics
1
0.1
1.2
TOP
BOTTOM
-V
-V
DS
VGS
-7.0V
-5.0V
-4.5V
-2.5V
-2.0V
-1.8V
-1.5V
-1.2V
GS
, Drain-to-Source Voltage (V)
1.6
, Gate-to-Source Voltage (V)
1
T = 25 C
J
-1.2V
2.0
°
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25 C
J
DS
10
= -15V
2.4
°
T = 150 C
J
°
P-Channel
2.8
100
100
0.1
10
Fig 19. Normalized On-Resistance
2.0
1.5
1.0
0.5
0.0
1
Fig 17. Typical Output Characteristics
0.1
-60 -40 -20
TOP
BOTTOM
I =
D
-V
-2.2A
DS
VGS
-7.0V
-5.0V
-4.5V
-2.5V
-2.0V
-1.8V
-1.5V
-1.2V
Vs. Temperature
T , Junction Temperature ( C)
J
, Drain-to-Source Voltage (V)
0
1
20 40 60
-1.2V
20µs PULSE WIDTH
T = 150 C
J
80 100 120 140 160
10
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°
V
°
GS
=
-4.5V
100