IRF7756 International Rectifier, IRF7756 Datasheet - Page 2
IRF7756
Manufacturer Part Number
IRF7756
Description
MOSFET 2P-CH 12V 4.3A 8-TSSOP
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7756.pdf
(9 pages)
Specifications of IRF7756
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
40 mOhm @ 4.3A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
4.3A
Vgs(th) (max) @ Id
900mV @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 4.5V
Input Capacitance (ciss) @ Vds
1400pF @ 10V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-TSSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7756
Notes:
IRF7756
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
R
I
I
d(on)
d(off)
S
SM
rr
r
f
DSS
GSS
fs
GS(th)
(BR)DSS
SD
iss
oss
rss
DS(on)
g
gs
gd
rr
Repetitive rating; pulse width limited by
Pulse width ≤ 400µs duty cycle ≤
max. junction temperature.
(BR)DSS
2
/∆T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Parameter
Parameter
J
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
-0.4
––– -0.006 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 1400 –––
–––
–––
–––
–––
–––
-12
13
Surface mounted on FR-4 board, ≤ 10sec
–––
––– 0.040
––– 0.058
––– 0.087
–––
–––
–––
–––
––– -100
–––
160
170
310
240
–––
1.8
2.9
12
12
18
35
20
-0.9
-1.0
-1.2
–––
–––
100
–––
–––
–––
–––
–––
–––
-25
2.7
4.4
-17
-1.0
30
18
53
V/°C
µA
nC
ns
nC
pF
ns
nA
V
Ω
V
S
V
di/dt = -100A/µs
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
ƒ = 1.0kHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
D
D
V
J
J
GS
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
G
GS
DS
GS
= -4.3A
= -1.0A
= 25°C, I
= 25°C, I
= 6.0Ω
= V
= -10V, I
= -9.6V, V
= -9.6V, V
= -6.0V
= -10V
= 0V, I
= -4.5V, I
= -2.5V, I
= -1.8V, I
= -8.0V
= 8.0V
= -4.5V
= -6.0V,
= 0V
= -4.5V
GS
Conditions
, I
D
S
F
D
Conditions
= -250µA
D
= -1.0A, V
= -1.0A
D
D
D
= -250µA
GS
GS
= -4.3A
= -4.3A
= -3.4A
= -2.2A
= 0V
= 0V, T
D
www.irf.com
= -1mA
GS
J
G
= 70°C
= 0V
S
D