IRF7750 International Rectifier, IRF7750 Datasheet

MOSFET 2P-CH 20V 4.7A 8-TSSOP

IRF7750

Manufacturer Part Number
IRF7750
Description
MOSFET 2P-CH 20V 4.7A 8-TSSOP
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7750

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
30 mOhm @ 4.7A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.7A
Vgs(th) (max) @ Id
1.2V @ 250µA
Gate Charge (qg) @ Vgs
39nC @ 5V
Input Capacitance (ciss) @ Vds
1700pF @ 15V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-TSSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7750
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7750TR
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7750TRPBF
Manufacturer:
ST
Quantity:
1 200
Company:
Part Number:
IRF7750TRPBF
Quantity:
20 000
Company:
Part Number:
IRF7750TRPBF
Quantity:
4 000
l
l
l
l
l
Absolute Maximum Ratings
Thermal Resistance
Description
HEXFET
low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier
is well known for,
management.
The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device
for applications where printed circuit board space is at a premium. The low profile (<1.1mm) allows it to fit easily into
extremely thin environments such as portable electronics and PCMCIA cards.
www.irf.com
V
I
I
I
P
P
V
T
R
D
D
DM
J,
DS
D
D
GS
@ T
@ T
JA
Ultra Low On-Resistance
Dual P-Channel MOSFET
Very Small SOIC Package
Low Profile ( < 1.1mm)
Available in Tape & Reel
@T
@T
T
STG
C
C
C
C
= 25°C
= 70°C
®
= 25°C
= 70°C
power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely
provides the designer with an extremely efficient and reliable device for battery and load
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Power Dissipation
Power Dissipation
Parameter
Parameter
GS
GS
ƒ
@ -4.5V
@ -4.5V
TSSOP-8
HEXFET
-55 to + 150
Max.
0.008
Max.
125
±4.7
±3.8
0.64
±38
± 12
-20
1.0
®
R
IRF7750
Power MOSFET
DS(on)
V
DSS
PD - 93848A
= 0.030
= -20V
Units
Units
W/°C
°C/W
W
°C
V
A
V
1
5/25/2000

Related parts for IRF7750

IRF7750 Summary of contents

Page 1

... Junction and Storage Temperature Range J, STG Thermal Resistance Parameter R Maximum Junction-to-Ambient JA www.irf.com HEXFET TSSOP-8 Max. @ -4.5V ±4 -4.5V ±3.8 GS 0.64 0.008 - 150 Max. ƒ 125 PD - 93848A IRF7750 ® Power MOSFET V = -20V DSS R = 0.030 DS(on) Units - ±38 1.0 W W/°C ± °C Units °C/W 1 5/25/2000 ...

Page 2

... IRF7750 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...

Page 3

... TOP 100 BOTTOM 10 1 ° 0.1 100 0.1 -V Fig 2. Typical Output Characteristics 100 10 ° 0.1 3.0 0.2 Fig 4. Typical Source-Drain Diode IRF7750 VGS -7.50V -5.00V -4.00V -3.50V -3.00V -2.50V -2.00V -1.50V -1.50V 20µs PULSE WIDTH ° 150 Drain-to-Source Voltage (V) DS ° ...

Page 4

... IRF7750 2500 1MHz iss rss 2000 oss iss 1500 1000 500 C oss C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1.00 0.80 0.60 0.40 0.20 -75 -50 - Temperature ( °C ) Fig 7. Threshold Voltage Vs. Temperature SHORTED 100 0 Fig 6. Typical Gate Charge Vs. ...

Page 5

... SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 125 150 0.01 0.10 ° Fig 10. Typical Power Vs. Time Notes: 1. Duty factor Peak 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7750 1.00 10.00 100.00 Time (sec thJA 100 5 ...

Page 6

... IRF7750 2.0 -4. 1.5 1.0 0.5 0.0 -60 -40 - Junction Temperature ( C) J Fig 12. Normalized On-Resistance Vs. Temperature 0.08 0.06 0.04 0.02 0.00 Fig 14. Typical On-Resistance Vs. Gate 6 0.08 0.06 0.04 0. -4.5V GS 0.00 80 100 120 140 160 0 ° Fig 13. Typical On-Resistance Vs. Drain -4.7A 2.0 2.5 3.0 ...

Page 7

... IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 www.irf.com IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel 451 0111 Data and specifications subject to change without notice. 5/2000 IRF7750 7 ...

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