IRF8915 International Rectifier, IRF8915 Datasheet - Page 6
![MOSFET 2N-CH 20V 8.9A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF8915
Manufacturer Part Number
IRF8915
Description
MOSFET 2N-CH 20V 8.9A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF8915TR.pdf
(10 pages)
Specifications of IRF8915
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
18.3 mOhm @ 8.9A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
8.9A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
7.4nC @ 4.5V
Input Capacitance (ciss) @ Vds
540pF @ 10V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS non-compliant
Other names
*IRF8915
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF8915PBF
Manufacturer:
CYPRESS
Quantity:
24 970
Part Number:
IRF8915PBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF8915TRPBF
Manufacturer:
IR
Quantity:
20 000
6
R G
20V
VGS
Fig 14. Unclamped Inductive Test Circuit
V DS
Fig 12. On-Resistance vs. Gate Voltage
40
35
30
25
20
15
10
Fig 16. Switching Time Test Circuit
t p
1
I AS
D.U.T
0.01 Ω
L
2
V GS, Gate -to -Source Voltage (V)
Duty Factor < 0.1%
Pulse Width < 1µs
T J = 25°C
V
3
GS
and Waveform
15V
4
DRIVER
V
DS
+
- V DD
5
A
I
6
AS
D.U.T
7
L
D
T J = 125°C
V
I D = 8.9A
DD
8
+
t p
-
9
10
V
(BR)DSS
90%
V
10%
V
DS
Fig 17. Switching Time Waveforms
60
50
40
30
20
10
GS
0
25
Fig 13. Maximum Avalanche Energy
Fig 15. Gate Charge Test Circuit
t
12V
Starting T J , Junction Temperature (°C)
d(on)
V
GS
Same Type as D.U.T.
50
Current Regulator
.2µF
t
vs. Drain Current
r
50KΩ
3mA
Current Sampling Resistors
75
.3µF
I
G
t
d(off)
100
D.U.T.
TOP
BOTTOM 7.1A
www.irf.com
I
D
t
f
125
+
-
V
DS
I D
2.4A
2.9A
150