IRF9910 International Rectifier, IRF9910 Datasheet - Page 2
![MOSFET 2N-CH 20V 10A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF9910
Manufacturer Part Number
IRF9910
Description
MOSFET 2N-CH 20V 10A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF9910TR.pdf
(10 pages)
Specifications of IRF9910
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
13.4 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
10A, 12A
Vgs(th) (max) @ Id
2.55V @ 250µA
Gate Charge (qg) @ Vgs
11nC @ 4.5V
Input Capacitance (ciss) @ Vds
900pF @ 10V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS non-compliant
Other names
*IRF9910
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF9910
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF9910PBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF9910TRPBF
Manufacturer:
IR
Quantity:
3 260
Part Number:
IRF9910TRPBF
Manufacturer:
IR
Quantity:
20 000
BV
∆ΒV
R
V
∆V
I
I
gfs
Q
Q
Q
t
t
t
t
C
C
C
Avalanche Characteristics
E
I
Diode Characteristics
I
I
V
t
Q
Static @ T
DSS
GSS
d(on)
r
d(off)
f
AR
S
SM
rr
GS(th)
AS
SD
DS(on)
iss
oss
rss
g
sw
oss
rr
2
Q
Q
Q
Q
DSS
GS(th)
gs1
gs2
gd
godr
DSS
/∆T
/∆T
J
J
J
= 25°C (unless otherwise specified)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Avalanche Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Param eter
Ã
Parameter
gs2
Parameter
+ Q
gd
)
Q1&Q2
Q1&Q2
Q1&Q2
Q1&Q2
Q1&Q2
Q1&Q2
Q1&Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Min.
1.65
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
20
19
27
0.0061
0.014
1860
Typ.
Typ.
10.7
14.6
0.85
–––
–––
-4.9
-5.0
–––
–––
–––
–––
–––
–––
900
290
600
140
310
–––
–––
–––
–––
–––
7.4
9.1
7.4
2.6
4.3
1.4
2.5
5.4
1.5
3.9
3.4
6.8
4.0
8.7
6.3
8.3
9.2
4.5
7.5
3.1
4.9
15
10
14
15
11
16
Max.
Max.
13.4
18.3
11.3
2.55
-100
–––
–––
–––
–––
–––
100
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
9.3
1.0
2.5
1.0
1.0
4.7
7.3
–––
–––
11
23
83
98
17
24
mV/°C
Units
Units
V/°C
mΩ
nC
nC
nC
µA
nA
pF
ns
ns
V
V
S
A
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
V
Q1
V
V
Q2
V
V
V
Q1
V
I
Q2
V
I
Clamped Inductive Load
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
Q1 T
Q2 T
D
D
J
J
GS
GS
GS
GS
GS
DS
DS
DS
GS
GS
DS
DS
DS
GS
DS
GS
DS
DD
DD
GS
DS
Q1 Max.
= 8.3A
= 9.8A
= 25°C, I
= 25°C, I
= 0V, I
= 10V, I
= 4.5V, I
= 10V, I
= 4.5V, I
= V
= 16V, V
= 16V, V
= 20V
= -20V
= 10V, I
= 10V, I
= 10V
= 4.5V, I
= 10V
= 4.5V, I
= 10V, V
= 16V, V
= 16V, V
= 0V
= 10V
V
V
8.3
33
J
J
DD
DD
= 25°C, I
= 25°C, I
GS
= 10V, di/dt = 100A/µs
= 10V, di/dt = 100A/µs
, I
D
D
S
S
D
D
D
D
= 250µA
D
D
D
D
GS
GS
GS
GS
GS
= 8.3A, V
= 9.8A, V
= 250µA
= 8.3A
= 9.8A
= 10A
= 12A
Conditions
Conditions
= 8.3A
= 9.8A
= 8.3A
= 9.8A
Q2 Max.
= 0V
= 0V, T
= 0V
= 4.5V
= 4.5V
F
F
= 8.3A,
= 9.8A,
www.irf.com
9.8
26
D
e
e
e
e
= 1mA
GS
GS
J
= 125°C
= 0V
= 0V
G
e
e
Units
e
e
mJ
A
D
S