IRF7313QTRPBF International Rectifier, IRF7313QTRPBF Datasheet

IRF7313QTRPBF

Manufacturer Part Number

IRF7313QTRPBF

Description

MOSFET HEX N-CH DUAL 30V 8-SOIC

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheets

1.IRF7313.pdf (7 pages)

2.IRF7313QTRPBF.pdf (7 pages)

Specifications of IRF7313QTRPBF

Fet Type

2 N-Channel (Dual)

Fet Feature

Standard

Rds On (max) @ Id, Vgs

29 mOhm @ 5.8A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

6.5A

Vgs(th) (max) @ Id

1V @ 250µA

Gate Charge (qg) @ Vgs

33nC @ 10V

Input Capacitance (ciss) @ Vds

650pF @ 25V

Power - Max

Mounting Type

Surface Mount

Package / Case

8-SOIC (3.9mm Width)

Transistor Polarity

N Channel

Continuous Drain Current Id

6.5A

Drain Source Voltage Vds

30V

On Resistance Rds(on)

29mohm

Rds(on) Test Voltage Vgs

10V

Threshold Voltage Vgs Typ

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

IRF7313QTRPBFCT

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF7313QTRPBF

Manufacturer:

Quantity:

20 000

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These HEXFET

SO-8 package utilize the lastest processing

techniques to achieve extremely low on-resistance

per silicon area. Additional features of these

HEXFET Power MOSFET's are a 150°C junction

operating temperature, fast switching speed and

improved repetitive avalanche rating. These

benefits combine to make this design an extremely

efficient and reliable device for use in a wide

variety of applications.

The efficient SO-8 package provides enhanced

thermal characteristics and dual MOSFET die

capability making it ideal in a variety of power

applications. This dual, surface mount SO-8 can

dramatically reduce board space and is also

available in Tape & Reel.

Description

Advanced Process Technology

Ultra Low On-Resistance

Dual N- Channel MOSFET

Surface Mount

Available in Tape & Reel

150°C Operating Temperature

Lead-Free

Power MOSFET's in a Dual

…

‚

Top View

SO-8

DS(on)

DSS

Ω

Related parts for IRF7313QTRPBF

IRF7313QTRPBF Summary of contents

Page 1

Advanced Process Technology l Ultra Low On-Resistance l Dual N- Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free l Description ® These HEXFET Power MOSFET Dual SO-8 package utilize ...

Page 2

‚ Ω www.irf.com Ω ƒ ≤ ≤ ≤ „ ≤ ≤ … „ „ „ Ω Ω „ ƒ ƒ ≤ ≤ 2 ...

Page 3

VGS TOP 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V 10 20µs PULSE WIDTH T = 25° 0 Drain-to-Source Voltage (V) DS 100 T = 25° 150° ...

Page 4

I = 5.8A D 1.5 1.0 0.5 0.0 -60 -40 - Junction Temperature ( C) J 0.12 0.10 0.08 0. 5.8A D 0.04 0.02 0. Gate-to-Source ...

Page 5

1MHz iss rss oss ds gd 900 C iss C oss 600 C rss 300 ...

Page 6

SO-8 Package Outline Dimensions are shown in millimeters (inches 0.25 [.010 NOT DIMENS IONING & ...

Page 7

SO-8 Tape and Reel Dimensions are shown in millimeters (inches) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS ...

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