IRF7341QTRPBF International Rectifier, IRF7341QTRPBF Datasheet - Page 6

• Manufacturer Part Number: IRF7341QTRPBF
• Description: MOSFET N-CH DUAL 55V 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7341QTRPBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 5.1A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 5.1A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 44nC @ 10V
• Input Capacitance (ciss) @ Vds: 780pF @ 25V
• Power - Max: 2.4W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7341QTRPBFCT

6
0.070
0.060
0.050
0.040
0.030
0.020
Fig 13a. Basic Gate Charge Waveform
Fig 11. Typical On-Resistance Vs.
Fig 13b. Gate Charge Test Circuit
2.0
12V
V
G
V
GS
Same Type as D.U.T.
Q
4.0
Current Regulator
GS
.2µF
V GS, Gate -to -Source Voltage (V)
Gate Voltage
50KΩ
3mA
6.0
Current Sampling Resistors
.3µF
Q
Charge
Q
GD
G
I
G
8.0
I D = 7.1A
D.U.T.
10.0
I
D
+
-
12.0
V
DS
14.0
16.0
0.100
0.080
0.060
0.040
0.020
400
320
240
160
80
0
25
Fig 14. Maximum Avalanche Energy
Fig 12. Typical On-Resistance Vs.
0
Starting Tj, Junction Temperature
50
10
VGS = 4.5V
Vs. Drain Current
Drain Current
I D , Drain Current ( A )
75
20
100
30
VGS = 10V
40
TOP
BOTTOM
125
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( C)
°
50
150
2.1A
4.3A
5.1A
I D
60
175