MMDF2P02ER2G ON Semiconductor, MMDF2P02ER2G Datasheet - Page 3

• Manufacturer Part Number: MMDF2P02ER2G
• Description: MOSFET PWR P-CH 25V 2.5A 8-SOIC
• Manufacturer: ON Semiconductor

Specifications of MMDF2P02ER2G

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 250 mOhm @ 2A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 475pF @ 16V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.6
0.5
0.4
0.3
0.2
0.1
2.0
1.5
1.0
0.5
−50
4
3
2
1
0
0
0
0
3
Figure 5. On−Resistance Variation with
V
I
−25
D
GS
Figure 1. On−Region Characteristics
V
= 2 A
4
GS
Figure 3. On−Resistance versus
= 10 V
V
V
0.4
DS
GS
= 10
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
T
D
, GATE−TO−SOURCE VOLTAGE (VOLTS)
0
T
J
Gate−to−Source Voltage
= 1 A
J
= 25°C
, JUNCTION TEMPERATURE (°C)
5
7 V
25
Temperature
0.8
5 V
6
50
4.7 V
TYPICAL ELECTRICAL CHARACTERISTICS
7
1.2
75
4.5 V
4.3 V
4.1 V
3.9 V
3.7 V
3.5 V
3.3 V
8
100
1.6
T
J
= 25°C
9
125
http://onsemi.com
MMDF2P02E
150
10
2
3
100
0.6
0.5
0.4
0.3
0.2
0.1
10
4
3
2
1
0
1
2.5
0
0
Figure 4. On−Resistance versus Drain Current
T
Figure 6. Drain−to−Source Leakage Current
V
J
V
DS
= 25°C
GS
≥ 10 V
= 0 V
Figure 2. Transfer Characteristics
V
V
DS
GS
4
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
0.5
3
I
D
, DRAIN CURRENT (AMPS)
and Gate Voltage
versus Voltage
8
V
GS
T
10 V
25°C
3.5
J
100°C
= 4.5
1
= 125°C
12
100°C
T
J
= −55°C
1.5
4
16
20
4.5
2