NTHD3100CT3 ON Semiconductor, NTHD3100CT3 Datasheet - Page 7

• Manufacturer Part Number: NTHD3100CT3
• Description: MOSFET N/P-CH COMPL 20V CHIPFET
• Manufacturer: ON Semiconductor

Specifications of NTHD3100CT3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.9A, 3.2A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 2.3nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 165pF @ 10V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-ChipFET™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
DEVICE ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
NTHD3100CT1
NTHD3100CT1G
NTHD3100CT3
NTHD3100CT3G
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1500
1200
1000
900
600
300
100
10
0
1
5
1
Figure 19. Resistive Switching Time Variation
V
C
C
V
I
V
DS
D
iss
rss
DS
GS
= −3.2 A
−V
= 0 V
= −10 V
= −4.5 V
GS
Device
Figure 17. Capacitance Variation
R
0
G
V
, GATE RESISTANCE (OHMS)
−V
GS
vs. Gate Resistance
DS
= 0 V
5
TYPICAL P−CHANNEL PERFORMANCE CURVES
10
10
(T
J
15
T
= 25°C unless otherwise noted)
C
J
oss
= 25°C
http://onsemi.com
t
t
t
t
d(on)
d(off)
r
f
(Pb−Free)
(Pb−Free)
Package
ChipFET
ChipFET
ChipFET
ChipFET
20
100
7
5
4
3
2
1
0
0
−V
5
4
2
0
3
1
0.3
Q
DS
Drain−to−Source Voltage vs. Total Charge
gs
Figure 20. Diode Forward Voltage vs. Current
−V
V
T
J
Figure 18. Gate−to−Source and
GS
SD
= 25°C
2
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
= 0 V
Q
Q
gd
g
, TOTAL GATE CHARGE (nC)
0.6
QT
4
10000 / Tape & Reel
10000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
Shipping
0.9
6
†
I
T
D
J
= −3.2 A
−V
= 25°C
GS
8
10
8
6
4
2
0
1.2