NTHD4502NT1 ON Semiconductor, NTHD4502NT1 Datasheet - Page 2

• Manufacturer Part Number: NTHD4502NT1
• Description: MOSFET N-CHAN DUAL 30V CHIPFET
• Manufacturer: ON Semiconductor

Specifications of NTHD4502NT1

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 85 mOhm @ 2.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 7nC @ 10V
• Input Capacitance (ciss) @ Vds: 140pF @ 15V
• Power - Max: 640mW
• Mounting Type: Surface Mount
• Package / Case: 8-ChipFET™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

4. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
5. Surface Mounted on FR4 Board using the minimum recommended pad size (Cu area = 0.214 in sq).
6. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
THERMAL RESISTANCE RATINGS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 6)
CHARGES AND CAPACITANCES
Junction−to−Ambient – Steady State (Note 4)
Junction−to−Ambient – t ≤ 5 s (Note 4)
Junction−to−Ambient – Steady State (Note 5)
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Drain−to−Source On−Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Parameter
Parameter
(T
J
= 25°C unless otherwise noted)
V
Symbol
Q
Q
V
R
Q
Q
(BR)DSS
C
C
C
C
GS(TH)
I
I
C
C
G(TOT)
Q
Q
G(TOT)
Q
Q
DS(on)
g
G(TH)
G(TH)
DSS
GSS
OSS
RSS
OSS
RSS
ISS
ISS
FS
GS
GD
GS
GD
http://onsemi.com
NTHD4502N
V
GS
= 0 V, V
V
V
V
V
V
V
V
V
V
GS
V
V
DS
GS
GS
GS
GS
GS
GS
2
GS
GS
DS
Test Conditions
= 4.5 V, V
= 0 V, V
= 10 V, V
= 0 V, f = 1.0 MHz,
= 0 V, f = 1.0 MHz,
= V
= 0 V, I
= 4.5 V, I
= 0 V, V
= 15 V, I
= 10 V, I
V
V
I
I
DS
D
D
DS
DS
DS
= 2.9 A
= 2.9 A
= 24 V, T
, I
= 15 V
= 24 V
GS
D
D
DS
DS
D
DS
D
= 250 mA
D
= 250 mA
= "20 V
= 2.9 A
= 2.9 A
= 2.2 A
= 24 V
= 15 V,
= 24 V,
J
= 125°C
Symbol
R
R
R
qJA
qJA
qJA
Min
1.0
30
1.65
Typ
105
140
135
Max
3.8
3.6
0.3
0.6
0.7
1.9
0.3
0.6
0.9
110
195
36
78
53
16
42
13
60
"100
Max
140
250
1.0
3.0
7.0
10
85
75
25
°C/W
Unit
Units
mW
nA
nC
nC
mA
pF
pF
V
V
S