NTJD4105CT2 ON Semiconductor, NTJD4105CT2 Datasheet
NTJD4105CT2
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NTJD4105CT2 Summary of contents
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NTJD4105C Small Signal MOSFET −8.0 V, Complementary, +0. −0.775 A, SC−88 Features • Complementary N and P Channel Device • Leading −8.0 V Trench for Low R DS(on) • ESD Protected Gate − ESD Rating: ...
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ELECTRICAL CHARACTERISTICS Parameter Symbol OFF CHARACTERISTICS Drain−to−Source V (BR)DSS Breakdown Voltage Drain−to−Source Breakdown V (BR)DSS Voltage Temperature Coeffi cient Zero Gate Voltage Drain Cur- I DSS rent Gate−to−Source I GSS Leakage Current ON CHARACTERISTICS (Note 2) Gate ...
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TYPICAL N−CHANNEL PERFORMANCE CURVES 0.8 0.6 0.4 0 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0.7 ...
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TYPICAL N−CHANNEL PERFORMANCE CURVES 5 Q G(TOT 0.2 0.4 0.6 0 TOTAL GATE CHARGE (nC) g Figure 7. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge (T J ...
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TYPICAL P−CHANNEL PERFORMANCE CURVES 1 −4 −2 −2 1.2 − 0.8 0.6 0.4 0 −V , DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 9. On−Region Characteristics ...
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TYPICAL P−CHANNEL PERFORMANCE CURVES 5 Q G(TOT 0.4 0.8 1.2 1 TOTAL GATE CHARGE (nC) g Figure 15. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge (T J ...
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... ORDERING INFORMATION Device NTJD4105CT1 NTJD4105CT1G NTJD4105CT2 NTJD4105CT2G NTJD4105CT4 NTJD4105CT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Package SOT−363 SOT−363 (Pb−Free) SOT−363 SOT−363 (Pb− ...
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... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...