NTMD2C02R2SG ON Semiconductor, NTMD2C02R2SG Datasheet - Page 3
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NTMD2C02R2SG
Manufacturer Part Number
NTMD2C02R2SG
Description
MOSFET N/P-CH COMPL 20V 8-SOIC
Manufacturer
ON Semiconductor
Datasheet
1.NTMD2C02R2.pdf
(12 pages)
Specifications of NTMD2C02R2SG
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
43 mOhm @ 4A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
5.2A, 3.4A
Vgs(th) (max) @ Id
1.2V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 4.5V
Input Capacitance (ciss) @ Vds
1100pF @ 10V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Final Product/Process Change Notification #16142
ELECTRICAL CHARACTERISTIC SUMMARY:
There is no change in electrical parametric performance. Characterization data is available
upon request.
CHANGED PART IDENTIFICATION:
SO8 Products assembled with the Copper Wire from the ON Semiconductor facility in
Carmona, Philippines will have a Finish Good Date Code representing Work Week 47, 2008
or newer.
Issue Date: 20-Aug-2008
Rev.14 Jun 2007
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