NTMD4840NR2G ON Semiconductor, NTMD4840NR2G Datasheet
NTMD4840NR2G
Manufacturer Part Number
NTMD4840NR2G
Description
MOSFET N-CH DUAL 30V 7.5A 8-SOIC
Manufacturer
ON Semiconductor
Datasheet
1.NTMD4840NR2G.pdf
(5 pages)
Specifications of NTMD4840NR2G
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
24 mOhm @ 6.9A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
4.5A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
5.2nC @ 4.5V
Input Capacitance (ciss) @ Vds
565pF @ 15V
Power - Max
680mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.024 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
15 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5.5 A
Power Dissipation
1950 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTMD4840NR2G
Manufacturer:
ON
Quantity:
10 000
Part Number:
NTMD4840NR2G
Manufacturer:
ON/安森美
Quantity:
20 000
UPDATE CHANGE NOTIFICATION
Generic Copy
29-Aug-2008
SUBJECT: ON Semiconductor Update Notification #16146
TITLE: Update Notification of FPCN16142: Copper Wire in the SO8 Packages for MOSFET
Products
PROPOSED FIRST SHIP DATE: 20-Nov-2008
AFFECTED CHANGE CATEGORY(S): Assembly
AFFECTED PRODUCT DIVISION(S): PowerFET Business Unit
ADDITIONAL RELIABILITY DATA:
SO8 Device: NTMS4807NT2G
Test: High Temperature Reverse Bias (HTRB)
Conditions: Ta=150'C, Vds= 80% BVdss Rating, Duration : 1008-Hrs, 3-Lots
Results: 0/240
Test: High Temperature Gate Bias (HTGB)
Conditions: Ta=150'C, Vds= 100% Vgs Rating, Duration : 1008-Hrs, 3-Lots
Results: 0/240
Test: High Temperature Storage Life (HTSL)
Conditions: Ta=175'C, Duration : 1008-Hrs, 3-Lots
Results: 0/240
Test: High Temperature Storage Life (HTSL)
Conditions: Ta=150'C, Duration : 1008-Hrs, 3-Lots
Results: 0/240
Test: Intermittent Operating Life (IOL-PC)
Conditions: Ta=25'C, delta Tj=100'C, 2-min on/off, 15K- cy, 2-Lots
Results: 0/240
Test: Temperature Cycling (TC-PC)
Conditions: Ta=-65'C/150'C, Air-to-Air, Dwell >=10-min, 1000-cy, 3-Lots
Results: 0/240
Test: Autoclave Test (AC-PC)
Conditions: Ta=121'C, P=15psi, RH=100%, Duration: 96-Hrs, 3-Lots
Results: 0/240
Test: Highly Accelerated Stress Test (HAST)
Conditions: Ta=130'C, RH=85%, Duration: 96-Hrs, 3-Lots
Results: 0/240
Issue Date: 29-Aug-2008
Rev.07-02-06
Page 1 of 3
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NTMD4840NR2G Summary of contents
Page 1
... UPDATE CHANGE NOTIFICATION SUBJECT: ON Semiconductor Update Notification #16146 TITLE: Update Notification of FPCN16142: Copper Wire in the SO8 Packages for MOSFET Products PROPOSED FIRST SHIP DATE: 20-Nov-2008 AFFECTED CHANGE CATEGORY(S): Assembly AFFECTED PRODUCT DIVISION(S): PowerFET Business Unit ADDITIONAL RELIABILITY DATA: SO8 Device: NTMS4807NT2G ...
Page 2
... An addendum to Final Product/Process Change Notification #16142: In connection to ON Semiconductor’s Initial Product Change Notification number 16091: ON Semiconductor is notifying customers of its use of Copper Wire (in place of Gold Wire) on their MOSFET Products in the SO8 Package. Products assembled with both High Cell Density and Trench2 MOSFET Die will be affected. (Note: Original Product Change Notice only had High Cell Density MOSFET Die listed ...
Page 3
... Update Notification #16146 AFFECTED DEVICE LIST NTMD4820NR2G NTMD4840NR2G NTMS4807NR2G NTMS4816NR2G NTMS4872NR2G Issue Date: 29-Aug-2008 Rev.07-02-06 Page ...