NTHD4401PT1G ON Semiconductor, NTHD4401PT1G Datasheet - Page 3

• Manufacturer Part Number: NTHD4401PT1G
• Description: MOSFET PWR P-CH DUAL20V CHIPFET
• Manufacturer: ON Semiconductor

Specifications of NTHD4401PT1G

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 155 mOhm @ 2.1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.1A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 300pF @ 10V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-ChipFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTHD4401PT1GOS; NTHD4401PT1GOS; NTHD4401PT1GOSTR

0.5
0.4
0.3
0.2
0.1
0
2
1
4
3
0
1
1.6
1.4
0.8
0.6
0
1.2
Figure 3. On−Resistance vs. Gate−to−Source
1
−50
−V
−V
I
V
D
1
GS
DS
Figure 1. On−Region Characteristics
GS
= −2.1 A
−25
Figure 5. On−Resistance Variation with
, GATE−TO−SOURCE VOLTAGE (VOLTS)
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
2
= −4.5 V
−2.2 V
V
V
2
T
GS
GS
J
, JUNCTION TEMPERATURE (°C)
0
TYPICAL PERFORMANCE CURVES
= −2.4 V
= −6 V to −3 V
3
3
Voltage
25
Temperature
4
50
4
5
−1.8 V
−1.6 V
−1.4 V
−1.2 V
−2 V
75
I
T
D
6
J
= −2.1 A
= 25°C
5
100
T
J
= 25°C
7
http://onsemi.com
125
NTHD4401P
6
8
150
3
0.225
0.175
0.125
(T
0.25
0.15
0.2
0.1
1.2
0.8
J
1
−50
4
3
2
1
0
0.5
= 25°C unless otherwise noted)
0.5
Figure 4. On−Resistance vs. Drain Current and
T
I
V
V
D
J
GS
DS
Figure 6. On−Resistance Variation with
−25
−V
= −1.0 A
= 25°C
≥ −10 V
= −1.8 V
GS
25°C
T
Figure 2. Transfer Characteristics
J
, GATE−TO−SOURCE VOLTAGE (VOLTS)
, JUNCTION TEMPERATURE (°C)
1
−I
1.5
D,
T
0
C
DRAIN CURRENT (AMPS)
= −55°C
25
Gate Voltage
Temperature
V
1.5
V
GS
GS
100°C
= −4.5 V
= −2.5 V
50
2.5
75
2
100
3.5
2.5
125
4.5
150
3