BS870-7-F Diodes Inc, BS870-7-F Datasheet - Page 2
![MOSFET N-CH 60V 250MA SOT23-3](/photos/1/37/13783/sot23_sml.jpg)
BS870-7-F
Manufacturer Part Number
BS870-7-F
Description
MOSFET N-CH 60V 250MA SOT23-3
Manufacturer
Diodes Inc
Datasheet
1.BS870-7-F.pdf
(3 pages)
Specifications of BS870-7-F
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5 Ohm @ 200mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
250mA
Vgs(th) (max) @ Id
3V @ 250µA
Input Capacitance (ciss) @ Vds
50pF @ 10V
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
5 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
0.08 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.25 A
Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
250mA
Drain Source Voltage Vds
60V
On Resistance Rds(on)
5ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
BS870-FDITR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BS870-7-F
Manufacturer:
Diodes
Quantity:
24 600
Part Number:
BS870-7-F
Manufacturer:
DIODES/美台
Quantity:
20 000
BS870
Document number: DS11302 Rev. 14 - 2
150
400
350
300
250
200
100
0.8
0.6
50
1.0
0.4
0.2
Fig. 5 Max Power Dissipation vs. Ambient Temperature
2.0
1.5
1.0
0.5
0
0
-55
0
0
0
Fig. 3 On-Resistance vs. Junction Temperature
-30
25
T , AMBIENT TEMPERATURE (°C)
V , DRAIN-SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE ( C)
A
DS
Fig. 1 On-Region Characteristics
j
1
50
-5
75
20
2
100 125
45
3
70
150
95
4
°
175
120
200
145
5
www.diodes.com
2 of 3
7
6
5
4
3
0
6
5
4
3
2
1
0
2
1
0
0
Fig. 4 On-Resistance vs. Gate-Source Voltage
Fig. 2 On-Resistance vs. Drain Current
2
V
GS
0.2
, GATE TO SOURCE VOLTAGE (V)
4
I , DRAIN CURRENT (A)
D
6
0.4
8
10
0.6
12
14
0.8
© Diodes Incorporated
16
BS870
1.0
May 2008
18