2N7002W-7-F Diodes Inc, 2N7002W-7-F Datasheet - Page 2
![MOSFET N-CH 60V 115MA SOT323](/photos/5/24/52423/sot-323_sml.jpg)
2N7002W-7-F
Manufacturer Part Number
2N7002W-7-F
Description
MOSFET N-CH 60V 115MA SOT323
Manufacturer
Diodes Inc
Datasheet
1.2N7002W-7-F.pdf
(3 pages)
Specifications of 2N7002W-7-F
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7.5 Ohm @ 50mA, 5V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
115mA
Vgs(th) (max) @ Id
2V @ 250µA
Input Capacitance (ciss) @ Vds
50pF @ 25V
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
7.5 Ohm @ 5 V
Forward Transconductance Gfs (max / Min)
0.08 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.115 A
Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
800mA
Drain Source Voltage Vds
60V
On Resistance Rds(on)
13.5ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2N7002W-FDITR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2N7002W-7-F
Manufacturer:
DIO
Quantity:
156 000
Part Number:
2N7002W-7-F
Manufacturer:
DIODES/美台
Quantity:
20 000
Electrical Characteristics
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
@ T
Gate-Body Leakage
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Static Drain-Source On-Resistance
@ T
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Notes:
2N7002W
Document number: DS30099 Rev. 14 - 2
C
j
= 125°C
= 125°C
1.0
0.8
0.4
0.6
0.2
3. Short duration pulse test used to minimize self-heating effect.
3.5
3.0
2.5
1.5
1.0
0.5
0.0
2.0
0
0
-55
Fig. 3 On-Resistance vs. Junction Temperature
-30
V , DRAIN-SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE ( C)
DS
Fig. 1 On-Region Characteristics
1
J
Characteristic
-5
20
2
45
@T
70
3
A
@ T
@ T
= 25°C unless otherwise specified
95
C
J
= 25°C
= 25°C
120 145 170
4
°
5
Symbol
www.diodes.com
R
BV
V
t
I
t
D(OFF)
DS(ON)
C
I
I
D(ON)
D(ON)
C
C
GS(th)
g
GSS
DSS
FS
oss
DSS
iss
rss
2 of 3
Min
1.0
0.5
60
80
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ
1.8
2.6
1.0
2.0
7.0
22
11
11
70
⎯
⎯
⎯
⎯
7
6
5
4
3
2
0
6
5
4
3
2
1
0
1
0
0
Fig. 4 On-Resistance vs. Gate-Source Voltage
13.5
Max
500
±10
1.0
2.0
7.5
5.0
Fig. 2 On-Resistance vs. Drain Current
⎯
⎯
50
25
20
20
2
⎯
V
GS
0.2
, GATE TO SOURCE VOLTAGE (V)
4
I , DRAIN CURRENT (A)
Unit
D
mS
μA
nA
pF
pF
pF
ns
ns
Ω
V
V
A
6
0.4
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
R
R
GS
DS
GS
DS
GS
GS
GS
DS
DS
DD
L
GEN
8
= 150Ω, V
= 60V, V
= V
= 10V, I
= 25V, V
= 0V, I
= ±20V, V
= 5.0V, I
= 10V, I
= 10V, V
= 30V, I
= 25Ω
10
GS
0.6
, I
Test Condition
D
D
D
D
D
12
= 10μA
D
GS
GS
DS
GEN
= 250μA
= 0.5A
= 0.2A
= 0.2A,
DS
= 0.05A
= 0V
= 7.5V
= 0V
= 0V
= 10V,
14
0.8
2N7002W
© Diodes Incorporated
16
August 2008
1.0
18