NDS351AN Fairchild Semiconductor, NDS351AN Datasheet

MOSFET N-CH 30V 1.4A SSOT3

NDS351AN

Manufacturer Part Number
NDS351AN
Description
MOSFET N-CH 30V 1.4A SSOT3
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of NDS351AN

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
160 mOhm @ 1.4A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
1.4A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
1.8nC @ 4.5V
Input Capacitance (ciss) @ Vds
145pF @ 15V
Power - Max
460mW
Mounting Type
Surface Mount
Package / Case
3-SSOT, SuperSOT-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.16 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
1.2 A
Power Dissipation
500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Dc
0442
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NDS351ANTR

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NDS351AN
N-Channel, Logic Level, PowerTrench MOSFET
General Description
These N-Channel Logic Level MOSFETs are produced
using
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are particularly suited for low voltage
applications in notebook computers, portable phones,
PCMCIA cards, and other battery powered circuits
where fast switching, and low in-line power loss are
needed in a very small outline surface mount package.
2003 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
J
DSS
GSS
D
, T
JA
JC
Device Marking
STG
Fairchild
351A
SuperSOT -3
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
TM
Semiconductor’s
– Continuous
– Pulsed
NDS351AN
G
Device
Parameter
S
advanced
T
A
=25
o
C unless otherwise noted
Reel Size
7’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1)
Features
1.4 A, 30 V.
Ultra-Low gate charge
Industry standard outline SOT-23 surface mount
package using proprietary SuperSOT
superior thermal and electrical capabilities
High performance trench technology for extremely
low R
DS(ON)
Tape width
G
R
R
DS(ON)
DS(ON)
–55 to +150
8mm
Ratings
0.46
250
1.4
0.5
30
10
75
= 160 m
= 250 m
20
D
S
@ V
@ V
TM
June 2003
GS
GS
-3 design for
NDS351AN Rev E(W)
3000 units
= 10 V
= 4.5 V
Quantity
Units
C/W
W
V
V
A
C

Related parts for NDS351AN

NDS351AN Summary of contents

Page 1

... T =25 C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1a) (Note 1) Reel Size Tape width 7’’ June 2003 = 160 DS(ON 250 4.5 V DS(ON design for D S Ratings Units 1 0.5 W 0.46 –55 to +150 C 250 C/W 75 Quantity 8mm 3000 units NDS351AN Rev E(W) ...

Page 2

... 100 A/µ determined by the user's board design 270°C/W when mounted on a minimum pad. 2.0% Min Typ Max Units mV 100 nA 0.8 2 –4 mV 160 m 120 250 114 214 = 125 C 3 145 1 1.3 1.8 nC 0.5 nC 0.5 nC 0.42 A 0.8 1.2 V (Note NDS351AN Rev E( ...

Page 3

... C 0.0001 3 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 4.0V 4.5V 5.0V 6.0V 10V DRAIN CURRENT ( 0. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD NDS351AN Rev E( 1.2 ...

Page 4

... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec MHz ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 270°C 25° 100 t , TIME (sec) 1 Power Dissipation. R ( 270 C/W JA P(pk ( Duty Cycle 100 NDS351AN Rev E(W) 30 1000 1000 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ ...

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