FDV304P Fairchild Semiconductor, FDV304P Datasheet - Page 3

• Manufacturer Part Number: FDV304P
• Description: MOSFET P-CH 25V 460MA SOT-23
• Manufacturer: Fairchild Semiconductor
• Type: Power MOSFETr

Specifications of FDV304P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.1 Ohm @ 500mA, 4.5V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 460mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 63pF @ 10V
• Power - Max: 350mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 1.1 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 0.8 S
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: 0.46 A
• Power Dissipation: 350 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 1.1Ohm
• Drain-source On-volt: 25V
• Gate-source Voltage (max): 8V
• Drain Current (max): 460mA
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDV304PTR

Typical Electrical Characteristics
-0.75
-0.25
-0.5
-1.25
-0.75
-0.25
-1
1.6
1.4
1.2
0.8
0.6
0
Figure 5. Transfer Characteristics.
-1.5
-0.5
-0.5
Figure 3. On-Resistance Variation
1
-1
-50
0
0
V
Figure 1. On-Region Characteristics.
V
GS
V
DS
I = -0.25A
D
GS
-25
= -5V
= -4.5V
= -2.7V
-1
with Temperature.
V
-1
GS
T , JUNCTION TEMPERATURE (°C)
0
V
, GATE TO SOURCE VOLTAGE (V)
J
DS
-3.5
, DRAIN-SOURCE VOLTAGE (V)
-1.5
25
-3.0
-2
T
-2.7
J
50
= -55°C
-2.5
-2
-3
75
25°C
-2.0
125°C
-2.5
100
-1.5
-4
125
-3
150
-5
0.0001
5
4
3
2
1
0
-1.6
-1.4
-1.2
-0.8
-0.6
-1
-1
0.01
0.5
0.1
0
Figure 2. On-Resistance Variation with
Figure 6. Body Diode Forward Voltage
V
0
GS
-1.5
Figure 4. On Resistance Variation with
Variation with Source Current and
Drain Current and Gate Voltage.
V
= -2.0 V
GS
25°C
= 0V
-0.2
V
Gate-To- Source Voltage.
0.2
-V
GS
-2
SD
, GATE TO SOURCE VOLTAGE (V)
, BODY DIODE FORWARD VOLTAGE (V)
125°C
I
-2.5
D
0.4
, DRAIN CURRENT (A)
-0.4
-2.5
T = 125°C
J
-3
-2.7
0.6
Temperature.
-3.0
25°C
-0.6
-3.5
-55°C
-3.5
0.8
-4
-4.0
-0.8
I = -0.5A
D
1
-4.5
-4.5
FDV304P Rev.E
-1
-5
1.2
1