NDS331N Fairchild Semiconductor, NDS331N Datasheet - Page 7

MOSFET N-CH 20V 1.3A SSOT3

NDS331N

Manufacturer Part Number
NDS331N
Description
MOSFET N-CH 20V 1.3A SSOT3
Manufacturer
Fairchild Semiconductor
Type
Power MOSFETr
Datasheet

Specifications of NDS331N

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
160 mOhm @ 1.5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
1.3A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
5nC @ 4.5V
Input Capacitance (ciss) @ Vds
162pF @ 10V
Power - Max
460mW
Mounting Type
Surface Mount
Package / Case
3-SSOT, SuperSOT-3
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.16Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
8V
Drain Current (max)
1.3A
Power Dissipation
500mW
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SuperSOT
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.16 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
8 V
Continuous Drain Current
1.3 A
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NDS331NTR

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reasonably expected to result in significant injury to the
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PRODUCT STATUS DEFINITIONS
Definition of Terms
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E
EnSigna
FACT™
FACT Quiet Series™
2
Advance Information
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No Identification Needed
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Datasheet Identification
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OPTOLOGIC™
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This datasheet contains the design specifications for
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This datasheet contains preliminary data, and
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SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
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Definition
VCX™
Rev. H4

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