ZXM61P02FTA Diodes Zetex, ZXM61P02FTA Datasheet - Page 2
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ZXM61P02FTA
Manufacturer Part Number
ZXM61P02FTA
Description
MOSFET P-CH 20V 900MA SOT23-3
Manufacturer
Diodes Zetex
Type
Small Signalr
Datasheet
1.ZXM61P02FTA.pdf
(7 pages)
Specifications of ZXM61P02FTA
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
600 mOhm @ 610mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
900mA
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
3.5nc @ 4.5V
Input Capacitance (ciss) @ Vds
150pF @ 15V
Power - Max
625mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.9Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±12V
Continuous Drain Current
900mA
Power Dissipation
806mW
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXM61P02FTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ZXM61P02FTA
Manufacturer:
ZETEX
Quantity:
3 000
Part Number:
ZXM61P02FTA
Manufacturer:
ZETEX
Quantity:
20 000
Part Number:
ZXM61P02FTA/P02
Manufacturer:
TOREX/特瑞仕
Quantity:
20 000
ABSOLUTE MAXIMUM RATINGS.
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
ISSUE 1 - JUNE 2004
PARAMETER
Drain-Source Voltage
Gate- Source Voltage
Continuous Drain Current (V
Pulsed Drain Current (c)
Continuous Source Current (Body Diode)(b)
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Operating and Storage Temperature Range
ZXM61P02F
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
Pulsed Source Current (Body Diode)(c)
A
A
=25°C (a)
=25°C (b)
(V
GS
GS
=4.5V; T
=4.5V; T
A
A
=25°C)(b)
=70°C)(b)
SYMBOL
V
I
I
I
P
P
V
I
T
2
D
DM
S
SM
SYMBOL
R
R
D
D
j
DSS
GS
:T
JA
JA
stg
-55 to +150
VALUE
LIMIT
-0.9
-0.7
-4.9
-0.9
-4.9
625
806
200
155
-20
6.4
5
12
mW/°C
mW/°C
UNIT
UNIT
°C/W
°C/W
mW
mW
°C
V
V
A
A
A
A