SI1300BDL-T1-E3 Vishay, SI1300BDL-T1-E3 Datasheet - Page 6

• Manufacturer Part Number: SI1300BDL-T1-E3
• Description: MOSFET N-CH 20V 400MA SOT323-3
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1300BDL-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 850 mOhm @ 250mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 400mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 0.84nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 35pF @ 10V
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.85 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.37 A
• Power Dissipation: 190 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 320mA
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 1.08ohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: 1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1300BDL-T1-E3TR

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Document Number: 91000
www.vishay.com
Revision: 18-Jul-08
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