ZXMN3F30FHTA Diodes Zetex, ZXMN3F30FHTA Datasheet - Page 2

• Manufacturer Part Number: ZXMN3F30FHTA
• Description: MOSFET N-CHAN 30V SOT23-3
• Manufacturer: Diodes Zetex

Specifications of ZXMN3F30FHTA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 47 mOhm @ 3.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 7.7nC @ 10V
• Input Capacitance (ciss) @ Vds: 318pF @ 15V
• Power - Max: 950mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMN3F30FHTR

Absolute maximum ratings
Thermal resistance
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
(b) For a device surface mounted on FR4 PCB measured at t ≤ 5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300μs - pulse width limited by maximum junction
(d) Thermal resistance from junction to solder-point (at the end of the drain lead).
Issue 2 - February 2008
© Zetex Semiconductors plc 2008
Parameter
Drain source voltage
Gate source voltage
Continous Drain Current @ V
Pulsed drain current
Continuous source current (body diode)
Pulsed source current (body diode)
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
Operating and storage temperature range
Parameter
Junction to ambient
Junction to ambient
Junction to lead
conditions.
temperature.
(d)
(a)
(b)
(c)
A
A
=25°C
=25°C
@ V
@ V
GS
GS
GS
(a)
(b)
=4.5; T
=4.5; T
=4.5; T
(c)
A
A
A
=70°C
=25°C
=25°C
(b)
(b)
(a)
(b)
2
Symbol
Symbol
T
V
R
R
R
j
V
I
I
, T
P
P
DM
SM
DSS
I
I
GS
D
S
D
D
JA
JA
JL
stg
ZXMN3F30FH
-55 to 150
Limit
Limit
0.95
11.2
±20
131
4.6
3.7
3.8
2.2
7.6
1.4
30
21
21
89
68
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mW/°C
mW/°C
°C/W
°C/W
°C/W
Unit
Unit
°C
W
W
A
A
A
A
A
A
V
V