ZXMN10A07FTA Diodes Zetex, ZXMN10A07FTA Datasheet - Page 2

• Manufacturer Part Number: ZXMN10A07FTA
• Description: MOSFET N-CH 100V 800MA SOT23-3
• Manufacturer: Diodes Zetex

Specifications of ZXMN10A07FTA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 700 mOhm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 700mA
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 2.9nC @ 10V
• Input Capacitance (ciss) @ Vds: 138pF @ 50V
• Power - Max: 625mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMN10A07FTR

ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
ZXMN10A07F
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ V
Pulsed Drain Current
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Operating and Storage Temperature Range
PARAMETER
Junction to Ambient
Junction to Ambient
S E M I C O N D U C T O R S
(c)
(b)
(a)
A
A
=25°C
=25°C
@ V
@ V
(a)
(b)
GS
GS
GS
=10V; T
=10V; T
=10V; T
(c)
A
A
A
=25°C
=70°C
=25°C
(b)
5 secs.
(b)
(b)
(a)
SYMBOL
V
V
I
I
I
I
P
P
T
SYMBOL
R
R
D
DM
S
SM
2
D
D
j
DSS
GS
;T
JA
JA
stg
-55 to +150
VALUE
LIMIT
100
625
806
200
155
0.8
0.6
0.7
3.5
0.5
3.5
6.4
5
20
ISSUE 5 - JULY 2003
mW/°C
mW/°C
UNIT
UNIT
°C/W
°C/W
mW
mW
°C
V
V
A
A
A
A