NDS355AN Fairchild Semiconductor, NDS355AN Datasheet

MOSFET N-CH 30V 1.7A SSOT3

NDS355AN

Manufacturer Part Number
NDS355AN
Description
MOSFET N-CH 30V 1.7A SSOT3
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of NDS355AN

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
85 mOhm @ 1.9A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
1.7A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
5nC @ 5V
Input Capacitance (ciss) @ Vds
195pF @ 15V
Power - Max
460mW
Mounting Type
Surface Mount
Package / Case
3-SSOT, SuperSOT-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.085 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.7 A
Power Dissipation
500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NDS355ANTR

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© 1997 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
NDS355AN
N-Channel Logic Level Enhancement Mode Field Effect Transistor
_______________________________________________________________________________
Symbol
V
V
I
P
T
THERMAL CHARACTERISTICS
R
R
SuperSOT
power field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very high
density process is especially tailored to minimize on-state
resistance. These devices are particularly suited for low voltage
applications in notebook computers, portable phones, PCMCIA
cards, and
switching, and low in-line power loss are needed in a very small
outline surface mount package.
General Description
D
J
DSS
GSS
D
,T
JA
JC
STG
TM
Parameter
Drain-Source Voltage
Gate-Source Voltage - Continuous
Maximum Drain Current - Continuous
Maximum Power Dissipation
Operating and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
-3 N-Channel logic level enhancement mode
other battery powered circuits where fast
T
A
- Pulsed
= 25°C unless otherwise noted
(Note 1)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1a)
Features
1.7A, 30 V, R
Industry standard outline SOT-23 surface mount package
thermal and electrical capabilities.
High density cell design for extremely low R
Exceptional on-resistance and maximum DC current
capability.
Compact industry standard SOT-23 surface mount
package.
using proprietary SuperSOT
DS(ON)
G
R
NDS355AN
-55 to 150
DS(ON)
= 0.125
0.46
250
±20
1.7
0.5
30
10
75
= 0.085
D
TM
@ V
-3 design for superior
@ V
S
GS
= 4.5 V
GS
January 1997
= 10 V.
DS(ON)
NDS355AN Rev.C
.
Units
°C/W
°C/W
°C
W
V
V
A

Related parts for NDS355AN

NDS355AN Summary of contents

Page 1

... Compact industry standard SOT-23 surface mount package 25°C unless otherwise noted A (Note 1a) - Pulsed (Note 1a) (Note 1b) (Note 1a) (Note 1) January 1997 = 0.125 @ V = 4.5 V DS(ON 0.085 @ DS(ON design for superior . DS(ON NDS355AN Units 30 V ± 0.5 W 0.46 -55 to 150 °C 250 °C/W 75 °C/W NDS355AN Rev.C ...

Page 2

... GS T =125° - 250 µ =125° 4 1 =125° 1.0 MHz GEN 4 GEN 1 Min Typ Max Units µA 10 µA 100 nA -100 0.5 1.2 1.5 0.105 0.125 0.16 0.23 0.065 0.085 6 A 3.5 S 195 pF 135 3 0.8 nC 1.7 nC NDS355AN Rev.C ...

Page 3

... C/W when mounted on a 0.001 in pad of 2oz copper Scale letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. = 25°C unless otherwise noted) Conditions =0. Min Typ Max 0.42 0.8 (Note 2) Units 1 guaranteed by JC NDS355AN Rev.C ...

Page 4

... Drain Current and Temperature 1.2 1.1 1 0.9 0.8 0.7 0.6 3.5 4 -50 -25 Figure 6. Gate Threshold Variation . 4.0 4.5 5.0 6 DRAIN CURRENT ( 125°C J 25°C -55° DRAIN CURRENT ( 250µ 100 125 T , JUNCTION TEMPERATURE (° with Temperature NDS355AN Rev.C 5 150 ...

Page 5

... Figure 10. Gate Charge Characteristics t R d(on OUT V OUT DUT Figure 12. Switching Waveforms = 125°C J 25°C -55°C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Source Current and Temperature 10V 15V GATE CHARGE (nC off t t d(off PULSE WIDTH . 1 INVERTED NDS355AN Rev.C ...

Page 6

... Current versus Copper Mounting Pad Area 0.01 0 TIME (sec 4.5V GS =See Note1b T = 25° DRAI N-SOURCE VOLTAGE ( 4.5"x5" FR-4 Board Still Air V = 4.5V GS 0.1 0.2 0.3 2oz COPPER MOUNTING PAD AREA ( ( See Note 1b JA P(pk ( Duty Cycle 100 50 0.4 . 300 NDS355AN Rev.C ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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