FDN340P Fairchild Semiconductor, FDN340P Datasheet

FDN340P

Manufacturer Part Number

FDN340P

Description

MOSFET P-CH 20V 2A SSOT3

Manufacturer

Fairchild Semiconductor

Series

PowerTrench®r

Datasheet

1.FDN340P.pdf (5 pages)

Specifications of FDN340P

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

70 mOhm @ 2A, 4.5V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

1.5V @ 250µA

Gate Charge (qg) @ Vgs

10nC @ 4.5V

Input Capacitance (ciss) @ Vds

779pF @ 10V

Power - Max

460mW

Mounting Type

Surface Mount

Package / Case

3-SSOT, SuperSOT-3

Configuration

Single

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.07 Ohm @ 4.5 V

Forward Transconductance Gfs (max / Min)

9 S

Drain-source Breakdown Voltage

20 V

Gate-source Breakdown Voltage

+/- 8 V

Continuous Drain Current

2 A

Power Dissipation

500 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Continuous Drain Current Id

Drain Source Voltage Vds

20V

On Resistance Rds(on)

70mohm

Rds(on) Test Voltage Vgs

-4.5V

Threshold Voltage Vgs Typ

-800mV

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

FDN340PTR

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FDN340P

Si ngl e P-Channel , Logi c Level , Power Tr ench

Gener al Descr i pt i on

Th i s P-Ch a n n el Logi c Lev el MOSFET i s prod u c ed

u s i n g Fa i rc h i ld Semi c on d u c tor a d v a n c ed Power Tren c h

proc es s th a t h a s been es pec i a lly ta i lored to mi n i mi z e

th e on -s tate res i s tanc e and y et mai ntai n low gate

c harge f or s uperi or s wi tc hi ng perf ormanc e.

Thes e dev i c es are well s ui ted f or portable elec troni c s

a ppli c a ti on s :load s wi tc hi ng and power management,

battery c hargi ng c i rc ui ts , and DC/ DC c onv ers i on.

Absol ut e Maxi m um Rat i ngs

Sym bol

Ther m al Char act er i st i cs

Package Mar ki ng and Or der i ng I nf or m at i on

θJA

θJ C

DSS

GSS

, T

Devi ce M ar ki ng

STG

£ ¥ ¤ § ¦ © ¨ £ ¥ © !

3 4 0

Dra i n -Sourc e Voltage

Ga te-Sourc e Voltage

Dra i n Cu rren t

Power Di s s i pa ti on f or Si n g le Opera ti on

Opera ti n g a n d Stora g e Ju n c ti on Tempera tu re Ra n g e

Th erma l Res i s ta n c e, Ju n c ti on -to-Ambi en t

Th erma l Res i s ta n c e, Ju n c ti on -to-Ca s e

– Con ti n u ou s

– Pu ls ed

FDN3 4 0P

De v i c e

Par am et er

" $ # & %

=25

C u n les s oth erwi s e n oted

Reel Si z e

7’ ’

( Note 1 a )

( Note 1 b)

( Note 1 a )

( Note 1 )

Feat ur es

• –2A, 20 V

• Low gate c harge ( 7.2 nC ty pi c al) .

• Hi g hperf ormanc e trenc h tec hnology f or ex tremely

• Hi gh power v ers i on of i ndus try Standard SOT-23

low R

pa c k a g e. Id en ti c a l pi n -ou t to SOT-23 wi th 30%

hi gher power handli ng c a pabi li ty .

® ® ® ®

DS( ON)

MOSFET

Tape wi dt h

DS( ON)

–55 to +1 50

Rat i ngs

8mm

0.4 6

–20

–1 0

250

0.5

±8

–2

= 70 mΩ @ V

= 1 1 0 mΩ @ V

February 2007

September 200

= –4 .5 V

3 000 u n i ts

FDN340P Rev E1

= –2.5 V

Quant i t y

Uni t s

°C/ W

°C

Related parts for FDN340P

FDN340P Summary of contents

Page 1

... les s oth erwi oted A ( Note Note Note Note Note 1 ) Reel Tape 7’ ’ September 200 February 2007 = 70 mΩ – DS( ON mΩ –2.5 V DS( ON Rat i ngs Uni t s –20 V ±8 V –2 A –1 0 0.5 W 0.4 6 °C – °C/ W 250 ° Quant 8mm 3 000 FDN340P Rev E1 ...

Page 2

... C/W when mounted .001 in pad copper Min Typ Max Units –20 V –12 mV/°C µA –1 =55°C –10 J 100 nA –100 nA –0.4 –0.8 –1 mV/° mΩ 77 120 =125° 110 – 779 pF 121 7 1.7 nC 1.5 nC –0.42 A –0.7 –1.2 V (Note 2) FDN340P Rev E1 ...

Page 3

... Figure 6 . Body Diode Forward Voltage Variation with Source Current and Temperature. =-2.0V GS -2.5V -3.0V -3.5V -4. DRAIN CURRENT ( - 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 - 0.2 0.4 0.6 0 BODY DIODE FORW ARD VOLTAGE (V) SD FDN340P Rev 1.2 ...

Page 4

... TIME (sec MHz ISS GS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 270° C/W θ 25° 100 SINGLE PULSE TIME (SEC) Power Dissipation. R θ JA ( θ 270 °C/W θ JA P(pk (t) θ Duty Cycle 100 FDN340P Rev E1 20 300 ...

Page 5

TRADEMARKS The following are registered and unregistered tradem ark s F airc hild onduc tor owns or is authoriz ed to use and is not intended haustiv e list of all suc ...

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