FDN306P Fairchild Semiconductor, FDN306P Datasheet - Page 3

• Manufacturer Part Number: FDN306P
• Description: MOSFET P-CH 12V 2.6A SSOT3
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDN306P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 2.6A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 2.6A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1138pF @ 6V
• Power - Max: 460mW
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.04 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 10 S
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 2.6 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDN306PTR

Typical Characteristics
20
15
10
1.4
1.3
1.2
1.1
0.9
0.8
20
15
10
5
0
1
5
0
Figure 3. On-Resistance Variation with
0.5
-50
Figure 1. On-Region Characteristics.
0
V
Figure 5. Transfer Characteristics.
V
GS
V
I
D
GS
-3.0V
DS
= -4.5V
= -2.6A
= -4.5V
-25
= -5V
-V
-V
T
1
GS
1
0
DS
J
, JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
-2.5V
, DRAIN TO SOURCE VOLTAGE (V)
Temperature.
25
1.5
50
-2.0V
2
T
A
75
= -55
o
C
-1.8V
100
o
3
C)
2
-125
125
-1.5V
25
o
C
o
C
150
2.5
4
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.001
0.12
0.08
0.06
0.04
0.02
0.01
2.2
1.8
1.6
1.4
1.2
0.8
0.1
0.1
10
2
1
1
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
0
0
1
V
V
GS
GS
Drain Current and Gate Voltage.
= -1.8V
= 0V
0.2
Gate-to-Source Voltage.
-V
T
SD
A
-V
= 125
, BODY DIODE FORWARD VOLTAGE (V)
5
GS
2
, GATE TO SOURCE VOLTAGE (V)
-2.0V
-I
o
0.4
T
C
D
A
, DIRAIN CURRENT (A)
= 25
25
o
o
C
C
10
0.6
-2.5V
3
-55
T
o
A
C
= 125
-3.0V
0.8
o
C
15
4
-3.5V
I
D
FDN306P Rev D W)
1
= -1.3A
-4.5V
20
1.2
5