FDN306P Fairchild Semiconductor, FDN306P Datasheet - Page 2
FDN306P
Manufacturer Part Number
FDN306P
Description
MOSFET P-CH 12V 2.6A SSOT3
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDN306P.pdf
(5 pages)
Specifications of FDN306P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
40 mOhm @ 2.6A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
2.6A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 4.5V
Input Capacitance (ciss) @ Vds
1138pF @ 6V
Power - Max
460mW
Mounting Type
Surface Mount
Package / Case
3-SSOT, SuperSOT-3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.04 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
10 S
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
2.6 A
Power Dissipation
500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDN306PTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDN306P
Manufacturer:
Fairchild Semiconductor
Quantity:
55 538
Company:
Part Number:
FDN306P
Manufacturer:
FAIRCHILD
Quantity:
2 400
Part Number:
FDN306P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDN306P-NL
Manufacturer:
FAI
Quantity:
20 000
Change To
Pg. 2