DMN3150LW-7 Diodes Inc, DMN3150LW-7 Datasheet - Page 2

• Manufacturer Part Number: DMN3150LW-7
• Description: MOSFET N-CH 28V 1.6A SC70-3
• Manufacturer: Diodes Inc

Specifications of DMN3150LW-7

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 88 mOhm @ 1.6A, 4.5V
• Drain To Source Voltage (vdss): 28V
• Current - Continuous Drain (id) @ 25° C: 1.6A
• Vgs(th) (max) @ Id: 1.4V @ 250µA
• Input Capacitance (ciss) @ Vds: 305pF @ 5V
• Power - Max: 350mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: DMN3150LWDITR

DMN3150LW
Document number: DS31514 Rev. 1 - 2
1.4
1.2
1.0
0.8
0.6
0.4
0.16
0.12
0.08
0.04
8
6
4
2
0
0
0
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
DS
vs. Drain Current and Gate Voltage
V
2
GS
I , DRAIN CURRENT (A)
D
Fig. 3
= 2.5V
On-Resistance
4
V
V
GS
GS
= 4.5V
= 10V
6
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8
2 of 4
1.6
1.4
1.2
1.0
0.8
0.6
8
6
4
2
0
0.5
Fig. 6 Normalized Static Drain-Source On-Resistance
-50 -25
Fig. 2 Typical Transfer Characteristics
V
V , DRAIN-SOURCE VOLTAGE (V)
V
Pulsed
DS
DS
GS
Fig. 4 Typical Total Capacitance
1
= 5V
T , AMBIENT TEMPERATURE (C)
f = 1 MHz
T = 25°C
, GATE-SOURCE VOLTAGE (V)
A
A
0
vs. Ambient Temperature
1.5
25
V
I = 1.6A
GS
D
= 4.5V
50
2
75
DMN3150LW
100
2.5
© Diodes Incorporated
125 150
C
C
iss
C
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oss
August 2008
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